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IRFS23N20D-VB Product details
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IRFS23N20D-VB MOSFET Product Introduction
IRFS23N20D-VB is a high voltage N-Channel MOSFET designed to handle high voltage and high current switching applications. It uses **Trench technology** to provide excellent conduction performance and high efficiency. The MOSFET is packaged in **TO263** and supports **VDS (drain-source voltage)** of **200V** and **VGS (gate-source voltage)** of **±20V**. Its **Vth (threshold voltage)** is **3V**, **RDS(ON)** is **48mΩ** when VGS=10V, and the maximum drain current **ID** is **40A**. These features make IRFS23N20D-VB suitable for switching applications requiring high voltage and high current.
IRFS23N20D-VB is a high voltage N-Channel MOSFET designed to handle high voltage and high current switching applications. It uses **Trench technology** to provide excellent conduction performance and high efficiency. The MOSFET is packaged in **TO263** and supports **VDS (drain-source voltage)** of **200V** and **VGS (gate-source voltage)** of **±20V**. Its **Vth (threshold voltage)** is **3V**, **RDS(ON)** is **48mΩ** when VGS=10V, and the maximum drain current **ID** is **40A**. These features make IRFS23N20D-VB suitable for switching applications requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 200V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Drain Current (ID)**: 40A
- **Technology**: Trench
- **Power Dissipation**: Suitable for high power handling due to low RDS(ON)
- **Operating Temperature**: Typically ranges from -55°C to 175°C
- **Gate Charge (Qg)**: Moderate, supports fast switching applications
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 200V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Drain Current (ID)**: 40A
- **Technology**: Trench
- **Power Dissipation**: Suitable for high power handling due to low RDS(ON)
- **Operating Temperature**: Typically ranges from -55°C to 175°C
- **Gate Charge (Qg)**: Moderate, supports fast switching applications
Domain and module applications：
Application fields and modules of IRFS23N20D-VB
The high voltage and high current characteristics of IRFS23N20D-VB MOSFET make it excel in multiple fields and modules:
1. **Power switch**: In DC-DC converters and high-voltage switch power supplies (SMPS), IRFS23N20D-VB can effectively handle voltages up to 200V, suitable for power management modules that require high voltage conversion, and its low on-resistance helps improve system efficiency.
2. **Battery management system**: Suitable for battery protection and management circuits, especially in high-voltage battery pack applications such as electric vehicles or energy storage systems, to ensure the safety and stability of battery packs in high voltage environments.
3. **Industrial control**: In industrial automation and control systems, this MOSFET can be used in high-voltage motor drive and control modules, capable of handling high current loads while providing stable performance and efficient power management.
4. **Automotive electronics**: In automotive power systems, such as switches for high-voltage loads such as power seats and lighting controls, the IRFS23N20D-VB is able to handle high voltages and provide reliable switching capabilities and protection.
5. **Communication equipment**: Suitable for power management and protection circuits in communication equipment, it can handle high-voltage power supplies and protect the equipment from voltage fluctuations, ensuring long-term stability and performance of the equipment.
The high voltage and high current characteristics of IRFS23N20D-VB MOSFET make it excel in multiple fields and modules:
1. **Power switch**: In DC-DC converters and high-voltage switch power supplies (SMPS), IRFS23N20D-VB can effectively handle voltages up to 200V, suitable for power management modules that require high voltage conversion, and its low on-resistance helps improve system efficiency.
2. **Battery management system**: Suitable for battery protection and management circuits, especially in high-voltage battery pack applications such as electric vehicles or energy storage systems, to ensure the safety and stability of battery packs in high voltage environments.
3. **Industrial control**: In industrial automation and control systems, this MOSFET can be used in high-voltage motor drive and control modules, capable of handling high current loads while providing stable performance and efficient power management.
4. **Automotive electronics**: In automotive power systems, such as switches for high-voltage loads such as power seats and lighting controls, the IRFS23N20D-VB is able to handle high voltages and provide reliable switching capabilities and protection.
5. **Communication equipment**: Suitable for power management and protection circuits in communication equipment, it can handle high-voltage power supplies and protect the equipment from voltage fluctuations, ensuring long-term stability and performance of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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