IRFS23N15DPBF-VB Product details
Product introduction:
IRFS23N15DPBF-VB is a high-performance N-channel MOSFET that uses advanced Trench technology and is designed for high voltage and high current applications. It has a maximum drain-source voltage (VDS) of 200V, a maximum gate-source voltage (VGS) of ±20V, and a maximum drain current (ID) of 40A. The on-resistance (RDS(ON)) of this MOSFET is 48mΩ at VGS=10V, and the package is TO263. IRFS23N15DPBF-VB is suitable for switching applications requiring high voltage and high current, and can effectively improve the efficiency and reliability of the system.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Power consumption (Pd)**: 90W
- **Maximum junction temperature (Tj)**: +175°C
- **Operating mode**: Enhancement mode
- **Technology**: Trench technology
Domain and module applications:
1. **Power management system**: IRFS23N15DPBF-VB can be used in high voltage switching power supplies and DC-DC converters as the main switching element. Its 200V drain-source voltage and low on-resistance of 48mΩ enable it to efficiently handle high power applications, reduce power losses, and improve system efficiency.
2. **Electric Vehicles (EV)**: In the drive system and charging module of electric vehicles, this MOSFET provides stable control of high current and high voltage. Its high current carrying capacity and low on-resistance make it suitable for use in motor control and battery management systems, ensuring efficient and reliable power conversion.
3. **Industrial Motor Control**: IRFS23N15DPBF-VB is suitable for motor drive and load switching in industrial automation. Its high voltage and high current characteristics enable it to handle the starting, stopping and speed regulation of various industrial motors, providing stable performance and long-term reliability.
4. **Photovoltaic inverter**: This MOSFET can be used in the inverter of the photovoltaic system for high voltage switching and power management. Its high voltage tolerance and high current handling capabilities ensure efficient energy conversion and system protection of the photovoltaic system.
Technical support:
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