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IRFS17N20DTRR-VB Product details
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1. Product Introduction:
IRFS17N20DTRR-VB is an N-channel power MOSFET packaged in TO263. This MOSFET uses Trench technology and has a high breakdown voltage of 200V and a drain current capability of up to 40A. Its low on-resistance (48mΩ@VGS=10V) and wide gate voltage range (±20V) enable it to perform well in high-voltage switching and power management applications. This MOSFET is designed to provide efficient power conversion and stable switching performance, suitable for demanding electronic systems and power modules.
IRFS17N20DTRR-VB is an N-channel power MOSFET packaged in TO263. This MOSFET uses Trench technology and has a high breakdown voltage of 200V and a drain current capability of up to 40A. Its low on-resistance (48mΩ@VGS=10V) and wide gate voltage range (±20V) enable it to perform well in high-voltage switching and power management applications. This MOSFET is designed to provide efficient power conversion and stable switching performance, suitable for demanding electronic systems and power modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ@VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ@VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Application fields and module examples:
- **High-voltage power management**: IRFS17N20DTRR-VB is suitable for high-voltage power management modules such as AC-DC converters and DC-DC converters. Its high breakdown voltage of 200V and low on-resistance enable it to effectively perform power conversion in high-voltage environments, reduce power losses and improve system efficiency.
- **Motor control systems**: In industrial motor drive systems and electric vehicle motor control, this MOSFET is capable of handling high currents (40A) and providing stable switching performance, making it suitable for motor switching and regulation circuits to ensure smooth operation of the motor.
- **Automotive electronics**: IRFS17N20DTRR-VB is used for high-voltage load switches and battery management systems in automotive electronics. Its high current carrying capacity and high breakdown voltage enable it to provide reliable switching and protection functions in the high-voltage systems of automobiles.
- **Industrial Control and Automation**: In industrial control and automation equipment, this MOSFET can be used for high-voltage switching and power control applications, and its excellent switching characteristics and high current capability help improve the performance and reliability of the equipment.
IRFS17N20DTRR-VB has great advantages in high-performance power management and high-power applications due to its excellent voltage tolerance, low on-resistance and high current handling capability.
- **High-voltage power management**: IRFS17N20DTRR-VB is suitable for high-voltage power management modules such as AC-DC converters and DC-DC converters. Its high breakdown voltage of 200V and low on-resistance enable it to effectively perform power conversion in high-voltage environments, reduce power losses and improve system efficiency.
- **Motor control systems**: In industrial motor drive systems and electric vehicle motor control, this MOSFET is capable of handling high currents (40A) and providing stable switching performance, making it suitable for motor switching and regulation circuits to ensure smooth operation of the motor.
- **Automotive electronics**: IRFS17N20DTRR-VB is used for high-voltage load switches and battery management systems in automotive electronics. Its high current carrying capacity and high breakdown voltage enable it to provide reliable switching and protection functions in the high-voltage systems of automobiles.
- **Industrial Control and Automation**: In industrial control and automation equipment, this MOSFET can be used for high-voltage switching and power control applications, and its excellent switching characteristics and high current capability help improve the performance and reliability of the equipment.
IRFS17N20DTRR-VB has great advantages in high-performance power management and high-power applications due to its excellent voltage tolerance, low on-resistance and high current handling capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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