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IRFS17N20DTRL-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
IRFS17N20DTRL-VB is an N-channel MOSFET in TO-263 package. Using advanced Trench technology, this MOSFET has a drain-source voltage of 200V and a drain current capability of 40A. It is designed to provide low on-resistance and efficient switching performance, making it very suitable for high voltage and high current power management applications. IRFS17N20DTRL-VB is suitable for switch control scenarios that require high efficiency and high reliability.
IRFS17N20DTRL-VB is an N-channel MOSFET in TO-263 package. Using advanced Trench technology, this MOSFET has a drain-source voltage of 200V and a drain current capability of 40A. It is designed to provide low on-resistance and efficient switching performance, making it very suitable for high voltage and high current power management applications. IRFS17N20DTRL-VB is suitable for switch control scenarios that require high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 48mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Trench technology
- **Power dissipation**: Heat dissipation design suitable for high current and high voltage applications
- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 48mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Trench technology
- **Power dissipation**: Heat dissipation design suitable for high current and high voltage applications
Domain and module applications：
3. Application fields and modules
1. **Power management**: The low on-resistance and high current capability of IRFS17N20DTRL-VB make it particularly suitable for DC-DC converters and high-efficiency power management systems. In these applications, it can be used as an efficient switching element or synchronous rectifier to improve system efficiency and reduce power consumption.
2. **Power switch**: In high-voltage power switching applications, this MOSFET can handle voltages up to 200V and is very suitable for switch control of high-voltage paths, such as power switches, inverters, etc., providing stable and reliable switching performance.
3. **Motor drive**: IRFS17N20DTRL-VB is suitable for high-current motor drive systems and can provide strong current support to ensure smooth operation and control of the motor. Its high current capability makes it perform well in motor drive modules that require high load control.
4. **Industrial automation**: In industrial automation applications, this MOSFET can be used as a switch to control high-voltage loads, such as power switches and load management systems, to ensure stable operation and safety of equipment under high voltage conditions.
These application examples demonstrate the applicability of the IRFS17N20DTRL-VB in fields such as power management, motor drive, and industrial automation, especially in scenarios that need to handle high voltage and high current, providing efficient switching control and stable performance.
1. **Power management**: The low on-resistance and high current capability of IRFS17N20DTRL-VB make it particularly suitable for DC-DC converters and high-efficiency power management systems. In these applications, it can be used as an efficient switching element or synchronous rectifier to improve system efficiency and reduce power consumption.
2. **Power switch**: In high-voltage power switching applications, this MOSFET can handle voltages up to 200V and is very suitable for switch control of high-voltage paths, such as power switches, inverters, etc., providing stable and reliable switching performance.
3. **Motor drive**: IRFS17N20DTRL-VB is suitable for high-current motor drive systems and can provide strong current support to ensure smooth operation and control of the motor. Its high current capability makes it perform well in motor drive modules that require high load control.
4. **Industrial automation**: In industrial automation applications, this MOSFET can be used as a switch to control high-voltage loads, such as power switches and load management systems, to ensure stable operation and safety of equipment under high voltage conditions.
These application examples demonstrate the applicability of the IRFS17N20DTRL-VB in fields such as power management, motor drive, and industrial automation, especially in scenarios that need to handle high voltage and high current, providing efficient switching control and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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