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IRFS17N20DPBF-VB Product details
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IRFS17N20DPBF-VB Product Introduction
IRFS17N20DPBF-VB is a high-voltage N-Channel MOSFET in a TO263 package. This MOSFET uses advanced Trench technology to provide excellent performance, especially in high-voltage and high-current applications. Its drain-source voltage (VDS) is up to 200V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 3V. The MOSFET has an on-resistance (RDS(ON)) of 48mΩ (VGS=10V) and a maximum drain current (ID) of 40A, making it suitable for high-power and high-voltage applications.
IRFS17N20DPBF-VB is a high-voltage N-Channel MOSFET in a TO263 package. This MOSFET uses advanced Trench technology to provide excellent performance, especially in high-voltage and high-current applications. Its drain-source voltage (VDS) is up to 200V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 3V. The MOSFET has an on-resistance (RDS(ON)) of 48mΩ (VGS=10V) and a maximum drain current (ID) of 40A, making it suitable for high-power and high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Switching speed**: High speed
- **Package type**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Switching speed**: High speed
Domain and module applications：
Applications and modules
1. **High voltage power switch**: The high withstand voltage characteristics of IRFS17N20DPBF-VB make it particularly suitable for high voltage power switch applications. In high voltage power management systems, it can stably control the current flow, improving the efficiency and reliability of the system.
2. **Power converter**: In power converters such as DC-DC converters and AC-DC converters, the high voltage and high current capabilities of this MOSFET enable it to effectively handle high power loads and improve conversion efficiency.
3. **Motor control**: Due to its high current carrying capacity and low on-resistance, IRFS17N20DPBF-VB can be used in motor drive applications, providing stable current control and efficient motor operation.
4. **Automotive electronics**: The high withstand voltage capability and reliability of this MOSFET make it suitable for high voltage applications in automotive electronic systems, such as power windows, door locks, and seat controls.
5. **Industrial control systems**: In industrial control systems, IRFS17N20DPBF-VB can be used as a switching element for high-power loads for power control, equipment protection, and other high-voltage applications to ensure stable and efficient operation of the system.
With its excellent high-voltage carrying capability and low on-resistance, IRFS17N20DPBF-VB is an ideal choice for handling high-power and high-voltage applications, providing a stable solution for a variety of industrial and power management applications.
1. **High voltage power switch**: The high withstand voltage characteristics of IRFS17N20DPBF-VB make it particularly suitable for high voltage power switch applications. In high voltage power management systems, it can stably control the current flow, improving the efficiency and reliability of the system.
2. **Power converter**: In power converters such as DC-DC converters and AC-DC converters, the high voltage and high current capabilities of this MOSFET enable it to effectively handle high power loads and improve conversion efficiency.
3. **Motor control**: Due to its high current carrying capacity and low on-resistance, IRFS17N20DPBF-VB can be used in motor drive applications, providing stable current control and efficient motor operation.
4. **Automotive electronics**: The high withstand voltage capability and reliability of this MOSFET make it suitable for high voltage applications in automotive electronic systems, such as power windows, door locks, and seat controls.
5. **Industrial control systems**: In industrial control systems, IRFS17N20DPBF-VB can be used as a switching element for high-power loads for power control, equipment protection, and other high-voltage applications to ensure stable and efficient operation of the system.
With its excellent high-voltage carrying capability and low on-resistance, IRFS17N20DPBF-VB is an ideal choice for handling high-power and high-voltage applications, providing a stable solution for a variety of industrial and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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