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IRFRC20-VB Product details
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1. Product Introduction:
IRFRC20-VB is a single N-channel MOSFET in a TO252 package with a drain-source voltage (VDS) of 650V, suitable for high voltage applications. This device is configured as an N-channel and has a high gate-source voltage tolerance (VGS is ±30V), suitable for operation in environments requiring higher voltages. The gate threshold voltage (Vth) is 3.5V, providing stable switching performance. Its on-resistance is 3440mΩ at a VGS of 4.5V and 4300mΩ at a VGS of 10V. The IRFRC20-VB utilizes Planar technology, and although its on-resistance is relatively high, it performs well in high voltage applications and is suitable for low current and high voltage power switching and control applications.
IRFRC20-VB is a single N-channel MOSFET in a TO252 package with a drain-source voltage (VDS) of 650V, suitable for high voltage applications. This device is configured as an N-channel and has a high gate-source voltage tolerance (VGS is ±30V), suitable for operation in environments requiring higher voltages. The gate threshold voltage (Vth) is 3.5V, providing stable switching performance. Its on-resistance is 3440mΩ at a VGS of 4.5V and 4300mΩ at a VGS of 10V. The IRFRC20-VB utilizes Planar technology, and although its on-resistance is relatively high, it performs well in high voltage applications and is suitable for low current and high voltage power switching and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 3440mΩ @ VGS=4.5V, 4300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology type**: Planar
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 3440mΩ @ VGS=4.5V, 4300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology type**: Planar
Domain and module applications：
3. Application fields and module examples:
- **High voltage switch**: IRFRC20-VB is particularly suitable for applications that require high voltage switching, such as switching and controlling high voltage DC power supplies. In these applications, the high VDS of the MOSFET can effectively handle the switching requirements in high voltage environments.
- **Power converter**: In high voltage power converters, such as AC-DC converters and high voltage DC-DC converters, IRFRC20-VB can handle high voltage inputs and effectively control the power conversion process. Although its on-resistance is high, its high VDS characteristics can ensure stable operation of the system.
- **Industrial power supply**: In industrial power management systems, especially in situations where high voltage support is required, such as motor drives and power supply systems, this MOSFET can provide reliable switching functions and is suitable for switching applications in high voltage environments.
- **Electronic power switch**: IRFRC20-VB can be used in electronic power switching systems in high voltage environments, such as power protection circuits or power distribution systems. Despite the higher on-resistance, its high voltage withstand capability enables it to provide effective switching control in these high voltage applications.
These application examples show that the IRFRC20-VB performs well in high voltage switching and power management applications, suitable for application scenarios requiring high voltage and low current.
- **High voltage switch**: IRFRC20-VB is particularly suitable for applications that require high voltage switching, such as switching and controlling high voltage DC power supplies. In these applications, the high VDS of the MOSFET can effectively handle the switching requirements in high voltage environments.
- **Power converter**: In high voltage power converters, such as AC-DC converters and high voltage DC-DC converters, IRFRC20-VB can handle high voltage inputs and effectively control the power conversion process. Although its on-resistance is high, its high VDS characteristics can ensure stable operation of the system.
- **Industrial power supply**: In industrial power management systems, especially in situations where high voltage support is required, such as motor drives and power supply systems, this MOSFET can provide reliable switching functions and is suitable for switching applications in high voltage environments.
- **Electronic power switch**: IRFRC20-VB can be used in electronic power switching systems in high voltage environments, such as power protection circuits or power distribution systems. Despite the higher on-resistance, its high voltage withstand capability enables it to provide effective switching control in these high voltage applications.
These application examples show that the IRFRC20-VB performs well in high voltage switching and power management applications, suitable for application scenarios requiring high voltage and low current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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