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IRFRC20PBF-VB Product details
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IRFRC20PBF-VB MOSFET Product Introduction
The IRFRC20PBF-VB is a single N-channel MOSFET packaged in TO252 (DPAK). The device is mainly used in high-voltage applications and can withstand drain-source voltages up to 650V. The IRFRC20PBF-VB uses planar technology and is suitable for use in high-voltage, high-power applications. Although its on-resistance is relatively high, its high voltage withstand capability enables it to perform well in situations where high-voltage loads need to be handled. The main application areas include power management, high-voltage switch control, and other high-voltage electronic circuits.
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The IRFRC20PBF-VB is a single N-channel MOSFET packaged in TO252 (DPAK). The device is mainly used in high-voltage applications and can withstand drain-source voltages up to 650V. The IRFRC20PBF-VB uses planar technology and is suitable for use in high-voltage, high-power applications. Although its on-resistance is relatively high, its high voltage withstand capability enables it to perform well in situations where high-voltage loads need to be handled. The main application areas include power management, high-voltage switch control, and other high-voltage electronic circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IRFRC20PBF-VB Detailed parameter description
- **Package type**: TO252 (DPAK)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 3440mΩ @ VGS = 4.5V
- 4300mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 2A
- **Technology type**: Plannar planar technology
This MOSFET is designed for high voltage applications with high drain-source voltage and moderate current carrying capability. Although its on-resistance is relatively high, its performance in high voltage environments ensures the stability of the system.
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- **Package type**: TO252 (DPAK)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 3440mΩ @ VGS = 4.5V
- 4300mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 2A
- **Technology type**: Plannar planar technology
This MOSFET is designed for high voltage applications with high drain-source voltage and moderate current carrying capability. Although its on-resistance is relatively high, its performance in high voltage environments ensures the stability of the system.
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Domain and module applications：
Application fields and module examples
1. **High voltage power switch**: The IRFRC20PBF-VB is suitable for high voltage power switch applications. Its high drain-source voltage capability (650V) enables it to handle large voltage loads. It is particularly suitable for switch control in power supply systems and high voltage power modules.
2. **Power converter**: In high voltage power converters, such as AC-DC converters or DC-DC converters, this MOSFET can withstand higher voltages to ensure stable conversion functions. Despite the high on-resistance, it can provide reliable switching performance in high voltage environments.
3. **Motor drive**: In motor drive systems that require high voltage control, the IRFRC20PBF-VB can be used for motor switch control. Its high voltage tolerance ensures stable operation under high voltage power supplies.
4. **Power protection circuit**: This MOSFET can be used in power protection circuits, especially those applications that need to handle high voltage surges. Its high withstand voltage capability can effectively protect the circuit from high voltage damage.
IRFRC20PBF-VB provides excellent high voltage handling capability and reliable switching performance in these application areas, suitable for a variety of high voltage power management and control applications.
1. **High voltage power switch**: The IRFRC20PBF-VB is suitable for high voltage power switch applications. Its high drain-source voltage capability (650V) enables it to handle large voltage loads. It is particularly suitable for switch control in power supply systems and high voltage power modules.
2. **Power converter**: In high voltage power converters, such as AC-DC converters or DC-DC converters, this MOSFET can withstand higher voltages to ensure stable conversion functions. Despite the high on-resistance, it can provide reliable switching performance in high voltage environments.
3. **Motor drive**: In motor drive systems that require high voltage control, the IRFRC20PBF-VB can be used for motor switch control. Its high voltage tolerance ensures stable operation under high voltage power supplies.
4. **Power protection circuit**: This MOSFET can be used in power protection circuits, especially those applications that need to handle high voltage surges. Its high withstand voltage capability can effectively protect the circuit from high voltage damage.
IRFRC20PBF-VB provides excellent high voltage handling capability and reliable switching performance in these application areas, suitable for a variety of high voltage power management and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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