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IRFR9N20DTR-VB Product details
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IRFR9N20DTR-VB MOSFET Product Introduction
IRFR9N20DTR-VB is an N-Channel MOSFET designed for high voltage and medium current switching applications. It uses Trench technology and has the advantages of high efficiency and low on-resistance. The device is packaged in TO252 and supports VDS (drain-source voltage) of 200V and VGS (gate-source voltage) of ±20V, with a Vth (threshold voltage) of 3V. When VGS=10V, its RDS(ON) is 245mΩ and the drain current ID is as high as 10A. These features make IRFR9N20DTR-VB suitable for applications requiring high voltage switching.
IRFR9N20DTR-VB is an N-Channel MOSFET designed for high voltage and medium current switching applications. It uses Trench technology and has the advantages of high efficiency and low on-resistance. The device is packaged in TO252 and supports VDS (drain-source voltage) of 200V and VGS (gate-source voltage) of ±20V, with a Vth (threshold voltage) of 3V. When VGS=10V, its RDS(ON) is 245mΩ and the drain current ID is as high as 10A. These features make IRFR9N20DTR-VB suitable for applications requiring high voltage switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 200V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**: 245mΩ @ VGS=10V
- **Drain Current (ID)**: 10A
- **Technology**: Trench
- **Power Dissipation**: Suitable for handling power at higher voltages due to medium RDS(ON)
- **Operating Temperature**: Typically ranges from -55°C to 175°C
- **Gate Charge (Qg)**: Moderate, supports fast switching operations
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 200V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**: 245mΩ @ VGS=10V
- **Drain Current (ID)**: 10A
- **Technology**: Trench
- **Power Dissipation**: Suitable for handling power at higher voltages due to medium RDS(ON)
- **Operating Temperature**: Typically ranges from -55°C to 175°C
- **Gate Charge (Qg)**: Moderate, supports fast switching operations
Domain and module applications：
IRFR9N20DTR-VB Applications and Modules
The IRFR9N20DTR-VB MOSFET is suitable for a variety of high voltage and medium current applications:
1. **Power Switch**: In high voltage DC-DC converters and switch mode power supplies (SMPS), this MOSFET can handle voltages up to 200V and is suitable for power modules that require high voltage conversion and stability.
2. **Battery Management System**: This MOSFET can be used in battery protection circuits, especially in the protection of high voltage battery packs, such as electric vehicles or large-scale energy storage systems, to ensure the safety and reliability of batteries under high voltage.
3. **Industrial Control Systems**: In industrial automation and control systems, the IRFR9N20DTR-VB is suitable for high voltage motor drive and control modules, and its high withstand voltage characteristics can effectively control high power loads.
4. **Automotive electronics**: In automotive power management systems, such as power seats, lighting control and other applications, it can handle high voltage loads and ensure stable switching performance and reliability.
5. **Communication equipment**: This MOSFET can also be used in power management and protection circuits in communication equipment to prevent high voltage from damaging the equipment and ensure long-term stable operation of the equipment.
The IRFR9N20DTR-VB MOSFET is suitable for a variety of high voltage and medium current applications:
1. **Power Switch**: In high voltage DC-DC converters and switch mode power supplies (SMPS), this MOSFET can handle voltages up to 200V and is suitable for power modules that require high voltage conversion and stability.
2. **Battery Management System**: This MOSFET can be used in battery protection circuits, especially in the protection of high voltage battery packs, such as electric vehicles or large-scale energy storage systems, to ensure the safety and reliability of batteries under high voltage.
3. **Industrial Control Systems**: In industrial automation and control systems, the IRFR9N20DTR-VB is suitable for high voltage motor drive and control modules, and its high withstand voltage characteristics can effectively control high power loads.
4. **Automotive electronics**: In automotive power management systems, such as power seats, lighting control and other applications, it can handle high voltage loads and ensure stable switching performance and reliability.
5. **Communication equipment**: This MOSFET can also be used in power management and protection circuits in communication equipment to prevent high voltage from damaging the equipment and ensure long-term stable operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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