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IRFR9N20DTRPBF-VB Product details
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1. IRFR9N20DTRPBF-VB Product Introduction
IRFR9N20DTRPBF-VB is a single N-channel MOSFET packaged in TO252. Using advanced Trench technology, this MOSFET is designed for efficient switching control in high voltage environments. With a drain-source voltage (VDS) of up to 200V and a maximum drain current (ID) of 10A, it is able to provide stable and reliable performance in high voltage and high power applications. The low on-resistance and high threshold voltage of IRFR9N20DTRPBF-VB make it an ideal choice for power management and switching applications.
IRFR9N20DTRPBF-VB is a single N-channel MOSFET packaged in TO252. Using advanced Trench technology, this MOSFET is designed for efficient switching control in high voltage environments. With a drain-source voltage (VDS) of up to 200V and a maximum drain current (ID) of 10A, it is able to provide stable and reliable performance in high voltage and high power applications. The low on-resistance and high threshold voltage of IRFR9N20DTRPBF-VB make it an ideal choice for power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IRFR9N20DTRPBF-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Drain current (ID)**: 10A
- **Technology**: Trench technology
- **Gate charge (Qg)**: Typical value is 70nC
- **Switching speed**: Suitable for medium-speed switching applications
- **Thermal resistance (RθJC)**: Maximum value is 2.0°C/W
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Drain current (ID)**: 10A
- **Technology**: Trench technology
- **Gate charge (Qg)**: Typical value is 70nC
- **Switching speed**: Suitable for medium-speed switching applications
- **Thermal resistance (RθJC)**: Maximum value is 2.0°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Application fields and module examples
1. **Power converter**
The high drain-source voltage and medium on-resistance of IRFR9N20DTRPBF-VB make it very suitable for use in power converters. It can effectively control the switching of high-voltage power supplies, ensuring the efficiency and stability of power conversion, especially in applications requiring higher voltage tolerance.
2. **Power switch**
This MOSFET can handle higher voltage and power loads in power switching applications, such as load switches in power management systems. Its high voltage capability and stable switching performance make it suitable for high-power circuits, capable of efficiently switching current loads.
3. **Motor drive**
In motor drive systems, IRFR9N20DTRPBF-VB can be used as a switching element to control the current of the motor. Its high drain-source voltage and relatively low on-resistance make it suitable for motor control applications that require high voltage and large current.
4. **High voltage protection circuit**
Due to its high drain-source voltage of 200V, this MOSFET is also suitable for high voltage protection circuits. It can be used to protect circuits from overvoltage and ensure the reliability and safety of equipment under extreme conditions.
The design of IRFR9N20DTRPBF-VB makes it suitable for use in high voltage, high power applications, especially in power converters, power switches and motor drive systems.
1. **Power converter**
The high drain-source voltage and medium on-resistance of IRFR9N20DTRPBF-VB make it very suitable for use in power converters. It can effectively control the switching of high-voltage power supplies, ensuring the efficiency and stability of power conversion, especially in applications requiring higher voltage tolerance.
2. **Power switch**
This MOSFET can handle higher voltage and power loads in power switching applications, such as load switches in power management systems. Its high voltage capability and stable switching performance make it suitable for high-power circuits, capable of efficiently switching current loads.
3. **Motor drive**
In motor drive systems, IRFR9N20DTRPBF-VB can be used as a switching element to control the current of the motor. Its high drain-source voltage and relatively low on-resistance make it suitable for motor control applications that require high voltage and large current.
4. **High voltage protection circuit**
Due to its high drain-source voltage of 200V, this MOSFET is also suitable for high voltage protection circuits. It can be used to protect circuits from overvoltage and ensure the reliability and safety of equipment under extreme conditions.
The design of IRFR9N20DTRPBF-VB makes it suitable for use in high voltage, high power applications, especially in power converters, power switches and motor drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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