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IRFR9N20DTRL-VB Product details
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1. IRFR9N20DTRL-VB Product Introduction
IRFR9N20DTRL-VB is an N-channel MOSFET using Trench technology, designed for high voltage applications. It has a maximum drain-source voltage (VDS) of 200V, a maximum gate-source voltage (VGS) of ±20V, and a maximum drain current (ID) of 10A. The on-resistance (RDS(ON)) of this MOSFET is 245mΩ at VGS=10V. It is packaged in TO252 (DPAK) and is suitable for switching and control applications requiring high voltage and medium current.
IRFR9N20DTRL-VB is an N-channel MOSFET using Trench technology, designed for high voltage applications. It has a maximum drain-source voltage (VDS) of 200V, a maximum gate-source voltage (VGS) of ±20V, and a maximum drain current (ID) of 10A. The on-resistance (RDS(ON)) of this MOSFET is 245mΩ at VGS=10V. It is packaged in TO252 (DPAK) and is suitable for switching and control applications requiring high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IRFR9N20DTRL-VB detailed parameter description
- **Package type**: TO252 (DPAK)
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Power consumption (Pd)**: 55W
- **Maximum junction temperature (Tj)**: +175°C
- **Operating mode**: Enhancement mode
- **Technology**: Trench technology
- **Package type**: TO252 (DPAK)
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Power consumption (Pd)**: 55W
- **Maximum junction temperature (Tj)**: +175°C
- **Operating mode**: Enhancement mode
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
1. **Power converter**: IRFR9N20DTRL-VB performs well in high voltage switching power supply applications. Its 200V drain-source voltage makes it suitable for AC-DC converters and high voltage DC-DC converters to handle switching operations when high voltage input and output.
2. **Electric vehicle drive system**: In the drive system of electric vehicles, this MOSFET can be used for high voltage and current switching control, such as motor drive circuits. Its high withstand voltage characteristics can meet the high voltage requirements of electric vehicles while providing stable current control.
3. **Industrial motor control**: IRFR9N20DTRL-VB is used for high voltage motor switching and control in motor control modules of industrial automation equipment. Its high voltage withstand capability and reliable switching performance ensure stable operation and effective control of the motor.
4. **LED lighting**: This MOSFET is also suitable for high voltage LED drive circuits, which can provide stable switching control in high voltage environments to ensure efficient operation and long life of LEDs. Its low on-resistance helps reduce power losses and improves overall system efficiency.
1. **Power converter**: IRFR9N20DTRL-VB performs well in high voltage switching power supply applications. Its 200V drain-source voltage makes it suitable for AC-DC converters and high voltage DC-DC converters to handle switching operations when high voltage input and output.
2. **Electric vehicle drive system**: In the drive system of electric vehicles, this MOSFET can be used for high voltage and current switching control, such as motor drive circuits. Its high withstand voltage characteristics can meet the high voltage requirements of electric vehicles while providing stable current control.
3. **Industrial motor control**: IRFR9N20DTRL-VB is used for high voltage motor switching and control in motor control modules of industrial automation equipment. Its high voltage withstand capability and reliable switching performance ensure stable operation and effective control of the motor.
4. **LED lighting**: This MOSFET is also suitable for high voltage LED drive circuits, which can provide stable switching control in high voltage environments to ensure efficient operation and long life of LEDs. Its low on-resistance helps reduce power losses and improves overall system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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