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IRFR9N20DPBF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IRFR9N20DPBF-VB is an N-channel power MOSFET packaged in TO252. The device uses Trench technology, has a high breakdown voltage of 200V and a high drain current capability of 10A, and is suitable for switching and power management in high-voltage applications. Its low on-resistance and high VDS capability enable it to perform well in scenarios that require efficient and highly reliable power control and switching operations.
IRFR9N20DPBF-VB is an N-channel power MOSFET packaged in TO252. The device uses Trench technology, has a high breakdown voltage of 200V and a high drain current capability of 10A, and is suitable for switching and power management in high-voltage applications. Its low on-resistance and high VDS capability enable it to perform well in scenarios that require efficient and highly reliable power control and switching operations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252 (DPAK)
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ@VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO252 (DPAK)
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ@VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Application fields and module examples:
- **High-voltage power management**: IRFR9N20DPBF-VB is suitable for high-voltage power systems such as AC-DC converters and DC-DC converters. Its 200V breakdown voltage ensures stability in high-voltage environments, while lower on-resistance helps reduce power loss and improve system efficiency.
- **Motor control**: In motor drive systems, such as industrial motors and electric vehicle motor control, IRFR9N20DPBF-VB can be used for motor drive switches, providing reliable high-voltage switching capability and high current carrying capacity to ensure stable operation of the motor system.
- **Automotive electronics**: This MOSFET is used in high-voltage battery management, load switches and other modules in automotive electronic systems. Its high breakdown voltage and on-resistance characteristics are suitable for handling high voltage and high power requirements in automobiles, providing safe and stable power control.
- **Industrial Application**: In industrial control and automation equipment, IRFR9N20DPBF-VB can be used in high voltage switching and power control circuits to provide efficient power management and ensure the reliability and long life of the equipment.
With its superior high voltage performance and high current handling capability, IRFR9N20DPBF-VB is widely used in power management and control systems that require high efficiency and reliability.
- **High-voltage power management**: IRFR9N20DPBF-VB is suitable for high-voltage power systems such as AC-DC converters and DC-DC converters. Its 200V breakdown voltage ensures stability in high-voltage environments, while lower on-resistance helps reduce power loss and improve system efficiency.
- **Motor control**: In motor drive systems, such as industrial motors and electric vehicle motor control, IRFR9N20DPBF-VB can be used for motor drive switches, providing reliable high-voltage switching capability and high current carrying capacity to ensure stable operation of the motor system.
- **Automotive electronics**: This MOSFET is used in high-voltage battery management, load switches and other modules in automotive electronic systems. Its high breakdown voltage and on-resistance characteristics are suitable for handling high voltage and high power requirements in automobiles, providing safe and stable power control.
- **Industrial Application**: In industrial control and automation equipment, IRFR9N20DPBF-VB can be used in high voltage switching and power control circuits to provide efficient power management and ensure the reliability and long life of the equipment.
With its superior high voltage performance and high current handling capability, IRFR9N20DPBF-VB is widely used in power management and control systems that require high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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