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IRFR9310TRPBF-VB Product details
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1. Product Introduction
IRFR9310TRPBF-VB is a high-voltage P-channel MOSFET in TO-252 package. This MOSFET is designed for high-voltage applications with a maximum drain-source voltage (VDS) of up to -500V, and can operate stably in harsh voltage environments. IRFR9310TRPBF-VB uses Plannar technology, which provides reliable performance in high-voltage applications compared to Trench technology. Although the on-resistance (RDS(ON)) of this MOSFET is high (4875mΩ@VGS=4.5V and 3900mΩ@VGS=10V), its high voltage resistance and stability make it suitable for specific application scenarios such as high-voltage switching and power management.
IRFR9310TRPBF-VB is a high-voltage P-channel MOSFET in TO-252 package. This MOSFET is designed for high-voltage applications with a maximum drain-source voltage (VDS) of up to -500V, and can operate stably in harsh voltage environments. IRFR9310TRPBF-VB uses Plannar technology, which provides reliable performance in high-voltage applications compared to Trench technology. Although the on-resistance (RDS(ON)) of this MOSFET is high (4875mΩ@VGS=4.5V and 3900mΩ@VGS=10V), its high voltage resistance and stability make it suitable for specific application scenarios such as high-voltage switching and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | 3900mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -500V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 4875mΩ @ VGS=4.5V
- 3900mΩ @ VGS=10V
- **Drain current (ID)**: -2A
- **Technology**: Plannar technology
- **Operating temperature range**: -55°C to +175°C
- **Package type**: TO-252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -500V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 4875mΩ @ VGS=4.5V
- 3900mΩ @ VGS=10V
- **Drain current (ID)**: -2A
- **Technology**: Plannar technology
- **Operating temperature range**: -55°C to +175°C
Domain and module applications：
3. Application fields and modules
IRFR9310TRPBF-VB MOSFET is suitable for the following fields and modules:
1. **High voltage power switch**: In power switch applications that need to handle high voltage, IRFR9310TRPBF-VB can withstand drain-source voltages up to 500V and is suitable for switching operations in high voltage power systems, such as high voltage DC switches and power protection circuits.
2. **Power management system**: In power management modules, such as high voltage DC-DC converters and voltage regulators, this MOSFET can be used for load switches in high voltage applications to provide reliable current control.
3. **Inverter and power conversion**: In inverters and power converters, IRFR9310TRPBF-VB can be used for switches on the high voltage side to help achieve efficient power conversion and power management, ensuring system stability and efficiency.
4. **Industrial Application**: In some industrial equipment and high voltage load control, the high withstand voltage characteristics of this MOSFET make it suitable for high voltage switching and load control, such as power electronic equipment and high voltage motor control.
IRFR9310TRPBF-VB MOSFET is suitable for the following fields and modules:
1. **High voltage power switch**: In power switch applications that need to handle high voltage, IRFR9310TRPBF-VB can withstand drain-source voltages up to 500V and is suitable for switching operations in high voltage power systems, such as high voltage DC switches and power protection circuits.
2. **Power management system**: In power management modules, such as high voltage DC-DC converters and voltage regulators, this MOSFET can be used for load switches in high voltage applications to provide reliable current control.
3. **Inverter and power conversion**: In inverters and power converters, IRFR9310TRPBF-VB can be used for switches on the high voltage side to help achieve efficient power conversion and power management, ensuring system stability and efficiency.
4. **Industrial Application**: In some industrial equipment and high voltage load control, the high withstand voltage characteristics of this MOSFET make it suitable for high voltage switching and load control, such as power electronic equipment and high voltage motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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