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IRFR9310PBF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
IRFR9310PBF-VB is a P-channel MOSFET in TO-252 package. The device uses Planar technology and has a drain-source voltage of up to -500V and a drain current capability of -2A. This makes the IRFR9310PBF-VB particularly suitable for switching applications that require high voltage isolation and stability. Although its on-resistance is high, its high withstand voltage characteristics enable it to perform well in high voltage environments.
IRFR9310PBF-VB is a P-channel MOSFET in TO-252 package. The device uses Planar technology and has a drain-source voltage of up to -500V and a drain current capability of -2A. This makes the IRFR9310PBF-VB particularly suitable for switching applications that require high voltage isolation and stability. Although its on-resistance is high, its high withstand voltage characteristics enable it to perform well in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | 3900mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -500V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 4875mΩ @ VGS = 4.5V
- 3900mΩ @ VGS = 10V
- **Drain current (ID)**: -2A
- **Technology**: Planar technology
- **Power dissipation**: Thermal management design suitable for high voltage switching applications
- **Package type**: TO-252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -500V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 4875mΩ @ VGS = 4.5V
- 3900mΩ @ VGS = 10V
- **Drain current (ID)**: -2A
- **Technology**: Planar technology
- **Power dissipation**: Thermal management design suitable for high voltage switching applications
Domain and module applications：
3. Application fields and modules
1. **High voltage switch**: The 500V withstand voltage characteristics of IRFR9310PBF-VB make it very suitable for high voltage switching applications, such as high voltage DC power switches and power protection circuits. These applications require switching devices to withstand high voltages and operate reliably.
2. **Power conversion**: In power conversion systems, such as high-voltage DC-DC converters, IRFR9310PBF-VB can be used for switch control of high voltage paths. Although its on-resistance is high, its stability in high voltage scenarios is still its advantage.
3. **Power management**: In high-voltage power management modules, such as high-voltage DC-DC converters or high-voltage power modules, this MOSFET can be used as a key switching element to ensure the stability and safety of high voltage circuits.
4. **Electronic equipment protection**: IRFR9310PBF-VB can be used as a switch in high voltage protection circuits, providing overvoltage protection functions to prevent circuit damage and system failures, and ensure the safe operation of equipment.
These application examples demonstrate the suitability of the IRFR9310PBF-VB in the field of high voltage switching and protection, especially in applications requiring high voltage tolerance and stability.
1. **High voltage switch**: The 500V withstand voltage characteristics of IRFR9310PBF-VB make it very suitable for high voltage switching applications, such as high voltage DC power switches and power protection circuits. These applications require switching devices to withstand high voltages and operate reliably.
2. **Power conversion**: In power conversion systems, such as high-voltage DC-DC converters, IRFR9310PBF-VB can be used for switch control of high voltage paths. Although its on-resistance is high, its stability in high voltage scenarios is still its advantage.
3. **Power management**: In high-voltage power management modules, such as high-voltage DC-DC converters or high-voltage power modules, this MOSFET can be used as a key switching element to ensure the stability and safety of high voltage circuits.
4. **Electronic equipment protection**: IRFR9310PBF-VB can be used as a switch in high voltage protection circuits, providing overvoltage protection functions to prevent circuit damage and system failures, and ensure the safe operation of equipment.
These application examples demonstrate the suitability of the IRFR9310PBF-VB in the field of high voltage switching and protection, especially in applications requiring high voltage tolerance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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