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IRFR9210TF-VB Product details
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IRFR9210TF-VB MOSFET Product Introduction
IRFR9210TF-VB is a single P-channel MOSFET packaged in TO252 (DPAK). It is designed for high-voltage, low-current applications and is suitable for handling negative voltage environments. The device uses trench technology, has high drain-source voltage resistance and large on-resistance, and is suitable for power management and switch control applications that require negative voltage switching. Although its on-resistance is relatively high, its high voltage resistance still gives it certain advantages in some special applications.
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IRFR9210TF-VB is a single P-channel MOSFET packaged in TO252 (DPAK). It is designed for high-voltage, low-current applications and is suitable for handling negative voltage environments. The device uses trench technology, has high drain-source voltage resistance and large on-resistance, and is suitable for power management and switch control applications that require negative voltage switching. Although its on-resistance is relatively high, its high voltage resistance still gives it certain advantages in some special applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | 1160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
IRFR9210TF-VB detailed parameter description
- **Package type**: TO252 (DPAK)
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1392mΩ @ VGS = 4.5V
- 1160mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: -3.6A
- **Technology type**: Trench technology
The high drain-source voltage capability (-200V) of this MOSFET enables it to handle higher voltage loads. Although their higher on-resistance may result in increased power dissipation in high current applications, their voltage withstand characteristics can provide additional protection in certain specific applications.
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- **Package type**: TO252 (DPAK)
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1392mΩ @ VGS = 4.5V
- 1160mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: -3.6A
- **Technology type**: Trench technology
The high drain-source voltage capability (-200V) of this MOSFET enables it to handle higher voltage loads. Although their higher on-resistance may result in increased power dissipation in high current applications, their voltage withstand characteristics can provide additional protection in certain specific applications.
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Domain and module applications：
Application fields and module examples
1. **High voltage power management**: The high drain-source withstand voltage capability of IRFR9210TF-VB makes it suitable for high voltage power management systems, such as high voltage power converters and power supply management circuits. Although its on-resistance is high, it can provide reliable switching performance when handling high voltages.
2. **Load switch**: In load switch applications, this MOSFET can be used in load switch circuits that need to handle negative voltages and high withstand voltages. It can work stably in negative voltage environments, and its high withstand voltage characteristics ensure the reliability of the circuit despite its high on-resistance.
3. **Motor control**: In some motor control systems, especially those involving high voltages, IRFR9210TF-VB can be used for high voltage load control of motors. Although its on-resistance is high, it can still provide effective control functions under the demand for high withstand voltages.
4. **Power protection**: This MOSFET can be used in power protection circuits, especially in scenarios where high voltage protection is required. IRFR9210TF-VB can prevent the circuit from being damaged by excessive voltage and ensure the stable operation of the system.
Although the on-resistance of IRFR9210TF-VB is relatively high, its performance in high voltage and negative voltage environments still makes it unique in specific fields.
1. **High voltage power management**: The high drain-source withstand voltage capability of IRFR9210TF-VB makes it suitable for high voltage power management systems, such as high voltage power converters and power supply management circuits. Although its on-resistance is high, it can provide reliable switching performance when handling high voltages.
2. **Load switch**: In load switch applications, this MOSFET can be used in load switch circuits that need to handle negative voltages and high withstand voltages. It can work stably in negative voltage environments, and its high withstand voltage characteristics ensure the reliability of the circuit despite its high on-resistance.
3. **Motor control**: In some motor control systems, especially those involving high voltages, IRFR9210TF-VB can be used for high voltage load control of motors. Although its on-resistance is high, it can still provide effective control functions under the demand for high withstand voltages.
4. **Power protection**: This MOSFET can be used in power protection circuits, especially in scenarios where high voltage protection is required. IRFR9210TF-VB can prevent the circuit from being damaged by excessive voltage and ensure the stable operation of the system.
Although the on-resistance of IRFR9210TF-VB is relatively high, its performance in high voltage and negative voltage environments still makes it unique in specific fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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