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IRFR9110PBF-VB Product details
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1. IRFR9110PBF-VB Product Introduction
IRFR9110PBF-VB is a single P-channel MOSFET in TO252 package with excellent electrical performance, suitable for use in high voltage and low current applications. It uses Trench technology to provide low on-resistance (RDS(ON)) and efficient switching performance, especially suitable for power management applications requiring high efficiency and low power consumption. The device has a drain-source voltage (VDS) of -100V and a maximum drain current (ID) of -8.8A, and can operate reliably in high voltage environments.
IRFR9110PBF-VB is a single P-channel MOSFET in TO252 package with excellent electrical performance, suitable for use in high voltage and low current applications. It uses Trench technology to provide low on-resistance (RDS(ON)) and efficient switching performance, especially suitable for power management applications requiring high efficiency and low power consumption. The device has a drain-source voltage (VDS) of -100V and a maximum drain current (ID) of -8.8A, and can operate reliably in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | 250mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. IRFR9110PBF-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 280mΩ @ VGS = 4.5V
- 250mΩ @ VGS = 10V
- **Drain current (ID)**: -8.8A
- **Technology**: Trench technology
- **Gate charge (Qg)**: Typical value is 45nC
- **Switching speed**: Suitable for medium-speed switching applications
- **Thermal resistance (RθJC)**: Maximum value is 2.5°C/W
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 280mΩ @ VGS = 4.5V
- 250mΩ @ VGS = 10V
- **Drain current (ID)**: -8.8A
- **Technology**: Trench technology
- **Gate charge (Qg)**: Typical value is 45nC
- **Switching speed**: Suitable for medium-speed switching applications
- **Thermal resistance (RθJC)**: Maximum value is 2.5°C/W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
III. Application fields and module examples
1. **Load switch**
IRFR9110PBF-VB is suitable for load switch applications in power management. Its P-channel characteristics simplify circuit design. The device can provide stable load control in the power distribution system and is suitable for occasions requiring high voltage shutdown and load switching.
2. **Power management and protection circuit**
In high-voltage power management systems, this MOSFET can be used for power switch control and overvoltage and overcurrent protection. It can effectively prevent voltage and current surges in the power system and ensure the stable and safe operation of the entire power module.
3. **DC-DC converter (DC-DC) and inverter**
In DC-DC converters or inverters, IRFR9110PBF-VB can be used as an efficient switching element to help achieve efficient power conversion, especially at higher input voltages. It can reduce energy loss and improve the overall efficiency of the converter.
4. **Power Tools and Industrial Equipment**
This device is suitable for control modules in power tools and industrial equipment, providing high voltage and medium current switching functions. Due to its high reliability and efficient current handling capabilities, it can ensure stable operation in harsh environments, especially in motor drive circuits.
The IRFR9110PBF-VB is designed for power management applications requiring high voltage and medium current, especially in load switches, protection circuits and DC-DC converters.
1. **Load switch**
IRFR9110PBF-VB is suitable for load switch applications in power management. Its P-channel characteristics simplify circuit design. The device can provide stable load control in the power distribution system and is suitable for occasions requiring high voltage shutdown and load switching.
2. **Power management and protection circuit**
In high-voltage power management systems, this MOSFET can be used for power switch control and overvoltage and overcurrent protection. It can effectively prevent voltage and current surges in the power system and ensure the stable and safe operation of the entire power module.
3. **DC-DC converter (DC-DC) and inverter**
In DC-DC converters or inverters, IRFR9110PBF-VB can be used as an efficient switching element to help achieve efficient power conversion, especially at higher input voltages. It can reduce energy loss and improve the overall efficiency of the converter.
4. **Power Tools and Industrial Equipment**
This device is suitable for control modules in power tools and industrial equipment, providing high voltage and medium current switching functions. Due to its high reliability and efficient current handling capabilities, it can ensure stable operation in harsh environments, especially in motor drive circuits.
The IRFR9110PBF-VB is designed for power management applications requiring high voltage and medium current, especially in load switches, protection circuits and DC-DC converters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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