中文
English
IRFR9014TRR-VB Product details
Back to previous pageProduct introduction：
IRFR9014TRR-VB MOSFET Product Introduction
IRFR9014TRR-VB is a **P-Channel MOSFET** designed for high-power switching applications. It uses **Trench technology** to provide low on-resistance and high efficiency. The device is packaged in **TO252** and supports **VDS (drain-source voltage)** of **-60V** and **VGS (gate-source voltage)** of **±20V**. Its **Vth (threshold voltage)** is **-1.7V**, **RDS(ON)** is **100mΩ** at VGS=4.5V, **90mΩ** at VGS=10V, and the drain current **ID** is as high as **-30A**. These features make the IRFR9014TRR-VB perform well in switching applications that require high current and low resistance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 100mΩ @ VGS=4.5V
- 90mΩ @ VGS=10V
- **Drain Current (ID)**: -30A
- **Technology**: Trench
- **Power Dissipation**: Able to handle power efficiently due to low RDS(ON)
- **Operating Temperature**: Typically ranges from -55°C to 175°C
- **Gate Charge (Qg)**: Low, ensuring fast switching capability
Domain and module applications：
IRFR9014TRR-VB Applications and Modules
The IRFR9014TRR-VB MOSFET is suitable for a variety of high power and low impedance applications:
1. **Power Switch**: In DC-DC converters or switch mode power supplies (SMPS), the high current handling capability and low on-resistance of this MOSFET enable efficient switching operations, improving the overall efficiency and reliability of the system.
2. **Battery Protection Circuit**: Due to its high drain current capability and low RDS(ON), this MOSFET is ideal for battery protection systems, especially in electric vehicles or large energy storage systems, to ensure the safety and performance of battery packs.
3. **Motor Drive**: Its excellent switching performance and high current handling capability make it suitable for motor drive modules such as industrial motor control, home appliances, etc., providing reliable motor control and efficient energy utilization.
4. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used for high-power switching, such as power windows, power seats or other electric loads, to provide stable performance and protection.
5. **Communication equipment**: Due to its low on-resistance and efficient switching characteristics, it is suitable for power management and protection circuits in communication equipment to ensure the stability and reliability of the equipment under high load conditions.
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
