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IRFR9010TRPBF-VB Product details
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IRFR9010TRPBF-VB Product Introduction
IRFR9010TRPBF-VB is a high-performance P-Channel MOSFET in TO252 package. The device uses Trench technology to provide excellent switching performance and stable current handling capability. Its rated drain-source voltage (VDS) is -60V, and the gate-source voltage (VGS) can withstand ±20V. The threshold voltage (Vth) of the MOSFET is -1.7V, the low on-resistance (RDS(ON)) is 72mΩ (VGS=4.5V) and 61mΩ (VGS=10V), and the drain current (ID) is up to -30A. These features make the IRFR9010TRPBF-VB very suitable for various power management and switch control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS=-4.5V; 90mΩ @ VGS=-10V
- **Maximum drain current (ID)**: -30A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Switching speed**: High speed
Domain and module applications：
Applications and modules
1. **Power management**: IRFR9010TRPBF-VB performs well in power management applications, especially in power switching and power protection circuits. Its low on-resistance and high current carrying capacity enable it to efficiently control the flow of power, reducing power consumption and heat.
2. **Battery protection circuit**: Due to its excellent current handling capability and reliability, this MOSFET is suitable for use in battery protection circuits, such as overcharge protection and over-discharge protection, ensuring safe battery use and extending battery life.
3. **Motor control**: In motor control systems, the high current capability and fast switching characteristics of IRFR9010TRPBF-VB enable it to efficiently drive motor loads, improving the response speed and working efficiency of the motor.
4. **Load switch**: MOSFET is suitable for a variety of load switching applications, such as LED lighting and other high-power load control. Its low on-resistance helps reduce power consumption during switching, thereby improving the overall efficiency of the system.
5. **Automotive Electronics**: The high temperature stability and high current carrying capability of the IRFR9010TRPBF-VB make it very useful in automotive electronic systems, such as power windows, door locks, and seat adjustment systems.
Through its excellent performance characteristics and wide applicability, the IRFR9010TRPBF-VB is able to provide efficient and reliable solutions for a variety of electronic applications.
Technical support：
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