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IRFR9010PBF-VB Product details
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IRFR9010PBF-VB MOSFET Product Introduction
IRFR9010PBF-VB is a single P-channel MOSFET packaged in TO252. This device uses advanced trench technology and is suitable for negative voltage applications. IRFR9010PBF-VB is designed for switch and load control applications that require high current carrying and low on-resistance. Its negative drain-source voltage capability is up to -60V, suitable for scenarios requiring high voltage resistance. Its low on-resistance characteristics enable it to maintain high efficiency under low voltage drive, and is particularly suitable for use in electronic devices that require low power consumption and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
IRFR9010PBF-VB Detailed parameter description
- **Package type**: TO252 (DPAK)
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 4.5V
- 90mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: -30A
- **Technology type**: Trench technology
The low on-resistance and high current carrying capability of this MOSFET enable it to perform well in negative voltage applications, providing reliable switching performance and reducing power consumption.
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Domain and module applications：
Application fields and module examples
1. **Power management and switching circuits**: IRFR9010PBF-VB can be used in negative voltage power management circuits, especially in application scenarios that require high current switching. The low on-resistance characteristics of this MOSFET ensure minimal losses during the switching process, thereby improving power conversion efficiency.
2. **Load switch**: In high current load switching applications, such as power tools, battery management systems, etc., IRFR9010PBF-VB can reliably control the switching state of the load. Its high current carrying capacity and low on-resistance provide efficient performance in load switching applications.
3. **DC-DC converter**: This MOSFET is suitable for the switching component of a DC-DC converter, especially in converters that need to handle negative voltages. The low on-resistance characteristics of the IRFR9010PBF-VB can effectively reduce energy losses during the conversion process and improve the power density and efficiency of the overall system.
4. **Electric vehicles and high-power power systems**: In the power management system of electric vehicles or high-power power systems, IRFR9010PBF-VB provides strong switching capability and high voltage withstand capability, suitable for high-power, high-current load control applications, ensuring reliable operation and long life of the system.
IRFR9010PBF-VB can demonstrate its excellent performance in these application fields, providing reliable switching control and efficient power management solutions.
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