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IRFR8721TRPBF-VB Product details

Product introduction:

IRFR8721TRPBF-VB MOSFET Product Introduction

IRFR8721TRPBF-VB is an **N-Channel MOSFET** designed for high power switching and low on-resistance applications. It uses **Trench technology** and has excellent switching performance and efficiency. The device is packaged in **TO252** and supports **VDS (drain-source voltage)** of **30V** and **VGS (gate-source voltage)** of **±20V**. Its **Vth (threshold voltage)** is **1.7V**, **RDS(ON)** is **6mΩ** at VGS=4.5V, **5mΩ** at VGS=10V, and the drain current **ID** is as high as **80A**. These characteristics make this MOSFET very suitable for applications requiring high current and low resistance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 80A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain Current (ID)**: 80A
- **Technology**: Trench
- **Power Dissipation**: High power handling capability due to low RDS(ON)
- **Operating Temperature**: Typically in the range of -55°C to 175°C
- **Gate Charge (Qg)**: Low for fast switching capability

Domain and module applications:

IRFR8721TRPBF-VB Applications and Modules

The IRFR8721TRPBF-VB MOSFET is suitable for several high power and low impedance application areas:

1. **Power Management System**: In DC-DC converters or switch mode power supplies (SMPS), this MOSFET can effectively handle high current and high power, reduce power losses and improve the overall efficiency of the system.

2. **Battery Management System (BMS)**: Due to its high drain current capability and low on-resistance, it is ideal for battery protection circuits, especially in electric vehicles or high-performance energy storage systems, ensuring the safety and efficiency of the battery pack.

3. **Motor Drive Control**: Its low RDS(ON) and high current capability make it suitable for motor drive control modules, such as in industrial automation, robotics or home appliances, to improve the accuracy and efficiency of motor control.

4. **Automotive electronics**: In automotive power management systems, this MOSFET can be used for switching high current loads, such as power windows, power seats or other electric devices, providing stable performance and reliable protection.

5. **Communication equipment**: Due to its excellent switching characteristics and low on-resistance, it is suitable for power distribution and protection circuits in communication equipment to ensure stable operation of the equipment under high loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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