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IRFR8713TRPBF-VB Product details
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1. IRFR8713TRPBF-VB Product Introduction
IRFR8713TRPBF-VB is a high-performance N-channel MOSFET manufactured using advanced Trench technology. It has an extremely low on-resistance (RDS(ON)), which is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V. The device has a maximum drain-source voltage (VDS) of 30V, a maximum gate-source voltage (VGS) of ±20V, a maximum drain current (ID) of 100A, and is packaged in TO252 (DPAK). IRFR8713TRPBF-VB is suitable for high current, high frequency and high efficiency switching power supply applications.
IRFR8713TRPBF-VB is a high-performance N-channel MOSFET manufactured using advanced Trench technology. It has an extremely low on-resistance (RDS(ON)), which is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V. The device has a maximum drain-source voltage (VDS) of 30V, a maximum gate-source voltage (VGS) of ±20V, a maximum drain current (ID) of 100A, and is packaged in TO252 (DPAK). IRFR8713TRPBF-VB is suitable for high current, high frequency and high efficiency switching power supply applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IRFR8713TRPBF-VB detailed parameter description
- **Package type**: TO252 (DPAK)
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Power consumption (Pd)**: 60W
- **Maximum junction temperature (Tj)**: +175°C
- **Operating mode**: Enhancement mode
- **Technology**: Trench technology
- **Package type**: TO252 (DPAK)
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Power consumption (Pd)**: 60W
- **Maximum junction temperature (Tj)**: +175°C
- **Operating mode**: Enhancement mode
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
1. **High-efficiency power conversion**: In a switching power supply (SMPS), the IRFR8713TRPBF-VB can be used as the main switching element to efficiently convert voltage and manage power. Its low RDS(ON) characteristics can reduce power loss and improve conversion efficiency, and is suitable for high-frequency switching and high-current applications.
2. **Electric vehicle (EV) battery management system**: This MOSFET provides efficient current control and protection in the battery management system of electric vehicles, can withstand currents up to 100A, and work stably at a voltage of 30V. Its low on-resistance makes the system more energy-efficient and reliable.
3. **High-power LED drive**: In high-power LED lighting systems, the IRFR8713TRPBF-VB can be used as a switching element in the LED drive circuit to provide stable current control. Its excellent switching performance and low on-resistance help improve the overall efficiency and brightness of the LED.
4. **Industrial Automation**: This MOSFET is widely used in industrial automation systems, such as motor drive and load switching. Its high current carrying capacity and low on-resistance can effectively improve the system's response speed and energy efficiency.
1. **High-efficiency power conversion**: In a switching power supply (SMPS), the IRFR8713TRPBF-VB can be used as the main switching element to efficiently convert voltage and manage power. Its low RDS(ON) characteristics can reduce power loss and improve conversion efficiency, and is suitable for high-frequency switching and high-current applications.
2. **Electric vehicle (EV) battery management system**: This MOSFET provides efficient current control and protection in the battery management system of electric vehicles, can withstand currents up to 100A, and work stably at a voltage of 30V. Its low on-resistance makes the system more energy-efficient and reliable.
3. **High-power LED drive**: In high-power LED lighting systems, the IRFR8713TRPBF-VB can be used as a switching element in the LED drive circuit to provide stable current control. Its excellent switching performance and low on-resistance help improve the overall efficiency and brightness of the LED.
4. **Industrial Automation**: This MOSFET is widely used in industrial automation systems, such as motor drive and load switching. Its high current carrying capacity and low on-resistance can effectively improve the system's response speed and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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