中文
English
IRFR825TRPBF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IRFR825TRPBF-VB is an N-channel power MOSFET packaged in TO252. The device adopts SJ_Multi-EPI technology and has a high breakdown voltage (VDS) of 650V and a relatively low on-resistance (RDS(ON)). It is designed to meet the needs of high-voltage applications while providing good switching characteristics and durability. It is widely used in high-voltage power supplies, inverters and power conversion systems.
IRFR825TRPBF-VB is an N-channel power MOSFET packaged in TO252. The device adopts SJ_Multi-EPI technology and has a high breakdown voltage (VDS) of 650V and a relatively low on-resistance (RDS(ON)). It is designed to meet the needs of high-voltage applications while providing good switching characteristics and durability. It is widely used in high-voltage power supplies, inverters and power conversion systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252 (DPAK)
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO252 (DPAK)
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Application fields and module examples:
- **High-voltage power management**: IRFR825TRPBF-VB is suitable for high-voltage power modules such as AC-DC converters and DC-DC converters. Its high breakdown voltage ensures reliability under high-voltage operating conditions, while the low on-resistance helps reduce power consumption.
- **Inverter**: In renewable energy systems such as solar inverters and wind inverters, this MOSFET is able to handle high-voltage DC power, provide stable power conversion, and ensure efficient operation of the system.
- **Industrial power**: This MOSFET can be used in industrial power systems, including motor drives and high-power control applications. Its high breakdown voltage and relatively high current capability make it suitable for handling high-power loads.
- **Automotive electronics**: In automotive electronic systems, such as high-voltage battery management systems and electric vehicle chargers, the high-voltage tolerance and switching performance of this MOSFET can effectively improve the reliability and efficiency of the system.
IRFR825TRPBF-VB demonstrates its superior performance in multiple demanding applications due to its high voltage and high current handling capabilities.
- **High-voltage power management**: IRFR825TRPBF-VB is suitable for high-voltage power modules such as AC-DC converters and DC-DC converters. Its high breakdown voltage ensures reliability under high-voltage operating conditions, while the low on-resistance helps reduce power consumption.
- **Inverter**: In renewable energy systems such as solar inverters and wind inverters, this MOSFET is able to handle high-voltage DC power, provide stable power conversion, and ensure efficient operation of the system.
- **Industrial power**: This MOSFET can be used in industrial power systems, including motor drives and high-power control applications. Its high breakdown voltage and relatively high current capability make it suitable for handling high-power loads.
- **Automotive electronics**: In automotive electronic systems, such as high-voltage battery management systems and electric vehicle chargers, the high-voltage tolerance and switching performance of this MOSFET can effectively improve the reliability and efficiency of the system.
IRFR825TRPBF-VB demonstrates its superior performance in multiple demanding applications due to its high voltage and high current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
