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IRFR7807ZTRPBF-VB Product details
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IRFR7807ZTRPBF-VB Product Introduction
IRFR7807ZTRPBF-VB is a high-performance N-Channel MOSFET in TO252 package. The device uses Trench technology to provide excellent switching performance and low on-resistance. Its rated drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) can withstand ±20V, and it has a threshold voltage (Vth) of 1.7V. The MOSFET has a low on-resistance (RDS(ON)) of 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V), as well as a drain current (ID) of up to 70A, making it suitable for applications with high current and high switching frequency. This device is ideal for use in areas with high performance requirements such as power management, power switching, and motor control.
IRFR7807ZTRPBF-VB is a high-performance N-Channel MOSFET in TO252 package. The device uses Trench technology to provide excellent switching performance and low on-resistance. Its rated drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) can withstand ±20V, and it has a threshold voltage (Vth) of 1.7V. The MOSFET has a low on-resistance (RDS(ON)) of 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V), as well as a drain current (ID) of up to 70A, making it suitable for applications with high current and high switching frequency. This device is ideal for use in areas with high performance requirements such as power management, power switching, and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS=4.5V; 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Switching speed**: High speed
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS=4.5V; 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Switching speed**: High speed
Domain and module applications：
Applications and modules
1. **Power management systems**: The IRFR7807ZTRPBF-VB is ideally suited as a switching element in power management systems due to its low on-resistance and high current carrying capability. It can be used in DC-DC converters and switching power supplies to improve energy efficiency and reduce power consumption.
2. **Motor drive**: In motor drive applications, the high current capability and low RDS(ON) of this MOSFET can effectively control the power switching of the motor, providing smooth motor operation and response.
3. **Power switch**: The IRFR7807ZTRPBF-VB excels in scenarios requiring high current switching, such as battery management systems and high power load control. Its fast switching characteristics and low on-resistance make it ideal for use in these applications.
4. **Automotive electronics**: Due to its high temperature stability and excellent current handling capability, this MOSFET can also be used in automotive electronic systems, such as power windows, door locks, and power seat control applications.
5. **LED driver**: In LED driver circuits, the low on-resistance of IRFR7807ZTRPBF-VB helps reduce power consumption and heat, and improves LED efficiency and lifespan.
Through its superior performance and wide application applicability, IRFR7807ZTRPBF-VB can provide reliable solutions for a variety of high-performance electronic devices.
1. **Power management systems**: The IRFR7807ZTRPBF-VB is ideally suited as a switching element in power management systems due to its low on-resistance and high current carrying capability. It can be used in DC-DC converters and switching power supplies to improve energy efficiency and reduce power consumption.
2. **Motor drive**: In motor drive applications, the high current capability and low RDS(ON) of this MOSFET can effectively control the power switching of the motor, providing smooth motor operation and response.
3. **Power switch**: The IRFR7807ZTRPBF-VB excels in scenarios requiring high current switching, such as battery management systems and high power load control. Its fast switching characteristics and low on-resistance make it ideal for use in these applications.
4. **Automotive electronics**: Due to its high temperature stability and excellent current handling capability, this MOSFET can also be used in automotive electronic systems, such as power windows, door locks, and power seat control applications.
5. **LED driver**: In LED driver circuits, the low on-resistance of IRFR7807ZTRPBF-VB helps reduce power consumption and heat, and improves LED efficiency and lifespan.
Through its superior performance and wide application applicability, IRFR7807ZTRPBF-VB can provide reliable solutions for a variety of high-performance electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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