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IRFR7446PBF-VB Product details
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1. Product Introduction:
IRFR7446PBF-VB is a high-performance single N-channel MOSFET in TO252 package type, using advanced Trench technology. With high current handling capability and ultra-low on-resistance, this MOSFET is ideal for applications requiring high efficiency and high power density. Its drain-source voltage (VDS) is 40V and can support drain currents up to 85A. The gate-source voltage (VGS) of the MOSFET is rated at ±20V and the gate threshold voltage is 2.5V. At VGS of 4.5V, its on-resistance is 6mΩ, and at VGS of 10V, the on-resistance is further reduced to 5mΩ. The low on-resistance and high current capability of this device make it excellent in power switching and power management applications.
IRFR7446PBF-VB is a high-performance single N-channel MOSFET in TO252 package type, using advanced Trench technology. With high current handling capability and ultra-low on-resistance, this MOSFET is ideal for applications requiring high efficiency and high power density. Its drain-source voltage (VDS) is 40V and can support drain currents up to 85A. The gate-source voltage (VGS) of the MOSFET is rated at ±20V and the gate threshold voltage is 2.5V. At VGS of 4.5V, its on-resistance is 6mΩ, and at VGS of 10V, the on-resistance is further reduced to 5mΩ. The low on-resistance and high current capability of this device make it excellent in power switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS=4.5V, 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS=4.5V, 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and module examples:
- **Power converter**: IRFR7446PBF-VB performs well in DC-DC converters and AC-DC power modules. Its ultra-low on-resistance and high current capability make it ideal for use as an efficient switch, which can significantly reduce power loss and improve the energy efficiency and reliability of the system.
- **Automotive electrical system**: In automotive electronic systems, such as on-board power supplies, smart chargers, and electric power steering (EPS) systems, this MOSFET can provide stable current control and efficient switching capabilities. Its high current handling capability and low on-resistance enable it to work stably for a long time in an automotive environment.
- **Motor control**: In motor drive and control modules, such as industrial motors and brushless DC motor (BLDC) drivers, IRFR7446PBF-VB can provide fast switching response and efficient power management. Its low on-resistance helps reduce energy loss and improve the dynamic performance and reliability of the system.
- **Power Amplifier**: This MOSFET is suitable for use in power amplifier modules, especially in high-power RF amplifiers and audio power amplifiers. Its ultra-low on-resistance helps reduce power losses and improve the overall efficiency and performance of the amplifier.
These application examples show the wide applicability of the IRFR7446PBF-VB in multiple high-power and high-efficiency applications, meeting the stringent requirements of high current and low on-resistance.
- **Power converter**: IRFR7446PBF-VB performs well in DC-DC converters and AC-DC power modules. Its ultra-low on-resistance and high current capability make it ideal for use as an efficient switch, which can significantly reduce power loss and improve the energy efficiency and reliability of the system.
- **Automotive electrical system**: In automotive electronic systems, such as on-board power supplies, smart chargers, and electric power steering (EPS) systems, this MOSFET can provide stable current control and efficient switching capabilities. Its high current handling capability and low on-resistance enable it to work stably for a long time in an automotive environment.
- **Motor control**: In motor drive and control modules, such as industrial motors and brushless DC motor (BLDC) drivers, IRFR7446PBF-VB can provide fast switching response and efficient power management. Its low on-resistance helps reduce energy loss and improve the dynamic performance and reliability of the system.
- **Power Amplifier**: This MOSFET is suitable for use in power amplifier modules, especially in high-power RF amplifiers and audio power amplifiers. Its ultra-low on-resistance helps reduce power losses and improve the overall efficiency and performance of the amplifier.
These application examples show the wide applicability of the IRFR7446PBF-VB in multiple high-power and high-efficiency applications, meeting the stringent requirements of high current and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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