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IRFR5505CPBF-VB Product details
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IRFR5505CPBF-VB Product Introduction
IRFR5505CPBF-VB is a P-Channel MOSFET with TO252 package and high-performance trench technology, suitable for applications requiring efficient power management and switching performance. Its main features include 60V drain-source voltage (VDS), ±20V gate-source voltage (VGS) and low on-resistance (RDS(ON)), which enable it to have excellent conduction performance under high current load. The current carrying capacity of this device is -35A, which is suitable for various switching power management and low-voltage and high-current control circuits.
IRFR5505CPBF-VB is a P-Channel MOSFET with TO252 package and high-performance trench technology, suitable for applications requiring efficient power management and switching performance. Its main features include 60V drain-source voltage (VDS), ±20V gate-source voltage (VGS) and low on-resistance (RDS(ON)), which enable it to have excellent conduction performance under high current load. The current carrying capacity of this device is -35A, which is suitable for various switching power management and low-voltage and high-current control circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=-4.5V; 46mΩ @ VGS=-10V
- **Maximum drain current (ID)**: -35A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Switching speed**: High speed
- **Package type**: TO252
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=-4.5V; 46mΩ @ VGS=-10V
- **Maximum drain current (ID)**: -35A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Switching speed**: High speed
Domain and module applications：
Applications and modules
1. **Motor drive and control**: IRFR5505CPBF-VB is ideal for motor drive circuits, especially in low-voltage reverse drive control. P-Channel MOSFET can simplify reverse switching, thereby reducing circuit complexity and power consumption.
2. **Power management module**: This MOSFET is widely used in switching power supplies and DC-DC converters. Its low on-resistance and high-speed switching capability make it an ideal choice for efficient power conversion and load switching applications.
3. **Battery protection circuit**: In portable devices, IRFR5505CPBF-VB can be used as a switch in the battery protection circuit to prevent overcharging and over-discharging, ensuring battery safety and life.
4. **Inverter and charging pile**: The high current carrying capacity and robust drain-source voltage (VDS) of this MOSFET also make it have good application potential in high-power devices such as inverters and electric vehicle charging piles.
Through its high performance parameters and wide range of application scenarios, IRFR5505CPBF-VB can provide efficient and reliable solutions for various electronic devices.
1. **Motor drive and control**: IRFR5505CPBF-VB is ideal for motor drive circuits, especially in low-voltage reverse drive control. P-Channel MOSFET can simplify reverse switching, thereby reducing circuit complexity and power consumption.
2. **Power management module**: This MOSFET is widely used in switching power supplies and DC-DC converters. Its low on-resistance and high-speed switching capability make it an ideal choice for efficient power conversion and load switching applications.
3. **Battery protection circuit**: In portable devices, IRFR5505CPBF-VB can be used as a switch in the battery protection circuit to prevent overcharging and over-discharging, ensuring battery safety and life.
4. **Inverter and charging pile**: The high current carrying capacity and robust drain-source voltage (VDS) of this MOSFET also make it have good application potential in high-power devices such as inverters and electric vehicle charging piles.
Through its high performance parameters and wide range of application scenarios, IRFR5505CPBF-VB can provide efficient and reliable solutions for various electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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