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IRFR540ZSPBF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IRFR540ZSPBF-VB is a single N-channel MOSFET in TO252 package with efficient power switching capability and excellent low on-resistance performance. The device adopts advanced Trench technology to ensure a high current output capability of 40A at a drain-source voltage of 100V. At the same time, its gate-source voltage (VGS) rating is ±20V and the gate threshold voltage is 1.8V, which enables it to achieve effective conduction at a lower gate drive voltage. Its on-resistance is 35mΩ at VGS of 4.5V and 30mΩ at VGS of 10V, which is suitable for application in circuits requiring efficient energy conversion and power management.
IRFR540ZSPBF-VB is a single N-channel MOSFET in TO252 package with efficient power switching capability and excellent low on-resistance performance. The device adopts advanced Trench technology to ensure a high current output capability of 40A at a drain-source voltage of 100V. At the same time, its gate-source voltage (VGS) rating is ±20V and the gate threshold voltage is 1.8V, which enables it to achieve effective conduction at a lower gate drive voltage. Its on-resistance is 35mΩ at VGS of 4.5V and 30mΩ at VGS of 10V, which is suitable for application in circuits requiring efficient energy conversion and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS=4.5V, 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS=4.5V, 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and module examples:
- **Power management module**: IRFR540ZSPBF-VB is widely used in power management modules such as DC-DC converters, switching power supplies and battery management systems. Its low on-resistance and high current capability enable it to effectively reduce energy loss and improve conversion efficiency, and is particularly suitable for high power density designs.
- **Automotive electronic system**: In automotive electronic systems such as on-board chargers, electric power steering (EPS) and electric window control, this MOSFET can provide stable performance in harsh environments with its high voltage and high current characteristics, ensuring system safety and reliability.
- **Motor drive and control**: This device is suitable for motor control fields such as industrial motors, brushless DC motor (BLDC) drivers, etc. In these applications, IRFR540ZSPBF-VB can provide fast switching response and precise current control through its efficient power switching characteristics, improving the overall system performance.
- **Solar Inverter**: IRFR540ZSPBF-VB can be used for switch management of DC input in solar inverter modules. Due to its low switching loss and efficient thermal performance, this MOSFET can support long-term stable operation and is suitable for energy feedback and inverter modules.
These application areas demonstrate the wide applicability of this MOSFET in multiple industries and modules, especially in power supplies and power conversion systems that require high efficiency and low power consumption.
- **Power management module**: IRFR540ZSPBF-VB is widely used in power management modules such as DC-DC converters, switching power supplies and battery management systems. Its low on-resistance and high current capability enable it to effectively reduce energy loss and improve conversion efficiency, and is particularly suitable for high power density designs.
- **Automotive electronic system**: In automotive electronic systems such as on-board chargers, electric power steering (EPS) and electric window control, this MOSFET can provide stable performance in harsh environments with its high voltage and high current characteristics, ensuring system safety and reliability.
- **Motor drive and control**: This device is suitable for motor control fields such as industrial motors, brushless DC motor (BLDC) drivers, etc. In these applications, IRFR540ZSPBF-VB can provide fast switching response and precise current control through its efficient power switching characteristics, improving the overall system performance.
- **Solar Inverter**: IRFR540ZSPBF-VB can be used for switch management of DC input in solar inverter modules. Due to its low switching loss and efficient thermal performance, this MOSFET can support long-term stable operation and is suitable for energy feedback and inverter modules.
These application areas demonstrate the wide applicability of this MOSFET in multiple industries and modules, especially in power supplies and power conversion systems that require high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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