IRFR460TRRPBF-VB Product details
Product introduction:
**IRFR460TRRPBF-VB** is a high voltage N-channel MOSFET in a TO252 package. It is designed to withstand drain-source voltages (VDS) up to 500V, making it ideal for high voltage switching and control applications. The maximum gate-source voltage (VGS) of this MOSFET is ±30V, ensuring its stability under high voltage conditions. The IRFR460TRRPBF-VB has a valve opening voltage (Vth) of 3.5V and uses SJ_Multi-EPI technology to provide lower on-resistance (RDS(ON)). The on-resistance of this MOSFET is 290mΩ @ VGS=10V and the maximum drain current (ID) is 14A, making it suitable for high power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 14A | 290mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 14A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 14A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 290mΩ @ VGS=10V
- **Maximum drain current (ID)**: 14A
- **Technology**: SJ_Multi-EPI
- **Power consumption**: The specific power consumption depends on the heat dissipation design
- **Maximum operating temperature**: 175°C
Domain and module applications:
1. **High-voltage switching circuits**:
The 500V drain-source voltage capability of the IRFR460TRRPBF-VB makes it ideal for use in high-voltage switching circuits, such as high-voltage DC-DC converters. In these applications, the high withstand voltage performance of the MOSFET can effectively control high-voltage loads and provide stable switching operations.
2. **Power management system**:
In power management systems, the IRFR460TRRPBF-VB can be used as a switching element to help achieve efficient power conversion and management. Its low on-resistance and high withstand voltage performance make it suitable for a variety of power conversion modules, including AC-DC and DC-DC converters.
3. **Industrial power supply**:
In industrial power systems, the IRFR460TRRPBF-VB is able to handle high voltage and high power loads. Its 500V high withstand voltage characteristics make it suitable for industrial power supply and power protection circuits to provide reliable power control.
4. **Inverter Application**:
IRFR460TRRPBF-VB also performs well in inverter applications. Its high drain-source voltage and stable switching performance make it suitable for applications that convert DC power to AC power, ensuring efficient and stable energy conversion.
**IRFR460TRRPBF-VB**, with its high withstand voltage and stable on-resistance characteristics, is suitable for high-voltage switching circuits, power management systems, industrial power supplies, and inverter applications, providing a reliable solution for various high-voltage power control needs.
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