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IRFR4510TR-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IRFR4510TR-VB is a high-performance N-channel MOSFET in TO252 package, designed for applications that require high voltage and high current handling. It is based on advanced Trench technology, providing low on-resistance and high current carrying capacity. This makes IRFR4510TR-VB perform well in power management applications that require high power, high efficiency and stability, and is an ideal choice for power switches and power management systems.
IRFR4510TR-VB is a high-performance N-channel MOSFET in TO252 package, designed for applications that require high voltage and high current handling. It is based on advanced Trench technology, providing low on-resistance and high current carrying capacity. This makes IRFR4510TR-VB perform well in power management applications that require high power, high efficiency and stability, and is an ideal choice for power switches and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | 8.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10.5mΩ @ VGS=4.5V
- 8.5mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 85A
- **Technology**: Trench technology
- **Other features**: With low on-resistance and high current handling capability, it is suitable for high voltage and high power applications.
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10.5mΩ @ VGS=4.5V
- 8.5mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 85A
- **Technology**: Trench technology
- **Other features**: With low on-resistance and high current handling capability, it is suitable for high voltage and high power applications.
Domain and module applications：
3. Application fields and module examples:
- **Power management**: IRFR4510TR-VB is suitable for power conversion modules such as buck converters and boost converters. In these applications, its low RDS(ON) can effectively reduce power consumption and improve power efficiency. Its high voltage carrying capacity makes it excel in high voltage power applications, ensuring system stability and reliability.
- **Automotive electronics**: In automotive electronic systems, this MOSFET is suitable for high power load switching, such as power windows, seat adjustments, and power distribution modules. Its high current handling capability and low on-resistance help improve the energy efficiency and response speed of automotive systems.
- **Industrial control**: IRFR4510TR-VB can be used for high power switching and motor drives in industrial equipment. Due to its high voltage and high current carrying capacity, this MOSFET can provide stable performance in industrial environments and improve the operating efficiency and reliability of equipment.
- **Communication equipment**: In the power management system of communication equipment, this MOSFET can be used for power switching and load control, such as the power management module of base stations. Its excellent current handling capability and low RDS(ON) ensure high efficiency and stable operation of communication equipment.
- **Power management**: IRFR4510TR-VB is suitable for power conversion modules such as buck converters and boost converters. In these applications, its low RDS(ON) can effectively reduce power consumption and improve power efficiency. Its high voltage carrying capacity makes it excel in high voltage power applications, ensuring system stability and reliability.
- **Automotive electronics**: In automotive electronic systems, this MOSFET is suitable for high power load switching, such as power windows, seat adjustments, and power distribution modules. Its high current handling capability and low on-resistance help improve the energy efficiency and response speed of automotive systems.
- **Industrial control**: IRFR4510TR-VB can be used for high power switching and motor drives in industrial equipment. Due to its high voltage and high current carrying capacity, this MOSFET can provide stable performance in industrial environments and improve the operating efficiency and reliability of equipment.
- **Communication equipment**: In the power management system of communication equipment, this MOSFET can be used for power switching and load control, such as the power management module of base stations. Its excellent current handling capability and low RDS(ON) ensure high efficiency and stable operation of communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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