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IRFR430-VB Product details
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IRFR430-VB Product Introduction
IRFR430-VB is a high-voltage, single N-channel MOSFET in TO252 package. This MOSFET adopts SJ_Multi-EPI technology and has good current handling capability and high voltage resistance characteristics. Its drain-source voltage (VDS) is as high as 650V, enabling it to handle higher voltage applications, while the gate-source voltage (VGS) range is ±30V, providing a wide control voltage range. The threshold voltage (Vth) of IRFR430-VB is 3.5V, enabling it to turn on at a lower gate voltage. Its on-resistance is 1000mΩ at VGS=10V, which is suitable for applications with high voltage resistance and relatively loose on-resistance requirements. The maximum drain current of IRFR430-VB is 5A, which can provide stable switching performance in a higher voltage environment and is suitable for a variety of applications requiring high voltage resistance and high current handling capabilities.
IRFR430-VB is a high-voltage, single N-channel MOSFET in TO252 package. This MOSFET adopts SJ_Multi-EPI technology and has good current handling capability and high voltage resistance characteristics. Its drain-source voltage (VDS) is as high as 650V, enabling it to handle higher voltage applications, while the gate-source voltage (VGS) range is ±30V, providing a wide control voltage range. The threshold voltage (Vth) of IRFR430-VB is 3.5V, enabling it to turn on at a lower gate voltage. Its on-resistance is 1000mΩ at VGS=10V, which is suitable for applications with high voltage resistance and relatively loose on-resistance requirements. The maximum drain current of IRFR430-VB is 5A, which can provide stable switching performance in a higher voltage environment and is suitable for a variety of applications requiring high voltage resistance and high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IRFR430-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ (VGS=10V)
- **Maximum drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI (polycrystalline silicon EPI technology)
- **Operating temperature range**: According to the actual application environment and heat dissipation design
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ (VGS=10V)
- **Maximum drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI (polycrystalline silicon EPI technology)
- **Operating temperature range**: According to the actual application environment and heat dissipation design
Domain and module applications：
Applicable fields and modules
IRFR430-VB's high withstand voltage and stable current handling capability enable it to excel in the following fields and modules:
1. **High-voltage power switch**:
In high-voltage power switch applications, such as AC-DC converters and high-voltage DC power systems, IRFR430-VB's 650V drain-source voltage enables it to handle switching tasks in high-voltage environments. Despite its high on-resistance (1000mΩ), its high withstand voltage characteristics make it suitable for occasions with high withstand voltage requirements.
2. **Industrial power system**:
In industrial power systems, such as power conversion and control modules, IRFR430-VB's high withstand voltage and moderate on-resistance enable it to handle high-voltage loads. Its stable switching performance and high withstand voltage characteristics ensure reliability and stability in industrial environments.
3. **Motor drive control**:
In motor drive control modules, IRFR430-VB can be used in high-voltage motor drive systems. Although its on-resistance is high, its high voltage withstand capability and stable current handling capability ensure the reliability of motor drive control.
4. **Lighting and electrical systems**:
In lighting and electrical systems, such as high-voltage lighting control and high-voltage electrical equipment, IRFR430-VB can be used as a power switch. Its high withstand voltage enables it to adapt to high-voltage lighting applications and provide reliable switching performance.
5. **UPS (Uninterruptible Power Supply) Systems**:
In UPS systems, IRFR430-VB can be used as a high-voltage switch and current control element. Its high withstand voltage and moderate on-resistance enable it to handle high-voltage loads in uninterruptible power supply systems, ensuring stable operation of the system when power is interrupted.
In summary, IRFR430-VB MOSFET performs well in high-voltage power switches, industrial power systems, motor drive control, lighting systems, and UPS systems with its high withstand voltage (650V) and good current handling capabilities. Its reliable performance and high withstand voltage characteristics make it an ideal choice in high-voltage applications.
IRFR430-VB's high withstand voltage and stable current handling capability enable it to excel in the following fields and modules:
1. **High-voltage power switch**:
In high-voltage power switch applications, such as AC-DC converters and high-voltage DC power systems, IRFR430-VB's 650V drain-source voltage enables it to handle switching tasks in high-voltage environments. Despite its high on-resistance (1000mΩ), its high withstand voltage characteristics make it suitable for occasions with high withstand voltage requirements.
2. **Industrial power system**:
In industrial power systems, such as power conversion and control modules, IRFR430-VB's high withstand voltage and moderate on-resistance enable it to handle high-voltage loads. Its stable switching performance and high withstand voltage characteristics ensure reliability and stability in industrial environments.
3. **Motor drive control**:
In motor drive control modules, IRFR430-VB can be used in high-voltage motor drive systems. Although its on-resistance is high, its high voltage withstand capability and stable current handling capability ensure the reliability of motor drive control.
4. **Lighting and electrical systems**:
In lighting and electrical systems, such as high-voltage lighting control and high-voltage electrical equipment, IRFR430-VB can be used as a power switch. Its high withstand voltage enables it to adapt to high-voltage lighting applications and provide reliable switching performance.
5. **UPS (Uninterruptible Power Supply) Systems**:
In UPS systems, IRFR430-VB can be used as a high-voltage switch and current control element. Its high withstand voltage and moderate on-resistance enable it to handle high-voltage loads in uninterruptible power supply systems, ensuring stable operation of the system when power is interrupted.
In summary, IRFR430-VB MOSFET performs well in high-voltage power switches, industrial power systems, motor drive control, lighting systems, and UPS systems with its high withstand voltage (650V) and good current handling capabilities. Its reliable performance and high withstand voltage characteristics make it an ideal choice in high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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