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IRFR430BTM-VB Product details
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Product Introduction
**IRFR430BTM-VB** is a high voltage N-Channel MOSFET in TO252 package. This MOSFET is designed for high voltage applications and has excellent voltage tolerance and stable conduction characteristics. Using SJ_Multi-EPI technology, this MOSFET performs well in high voltage environments and is suitable for electronic devices that require high voltage protection and high reliability.
**IRFR430BTM-VB** is a high voltage N-Channel MOSFET in TO252 package. This MOSFET is designed for high voltage applications and has excellent voltage tolerance and stable conduction characteristics. Using SJ_Multi-EPI technology, this MOSFET performs well in high voltage environments and is suitable for electronic devices that require high voltage protection and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: IRFR430BTM-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
- **Model**: IRFR430BTM-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Application fields and module examples
1. **High voltage power switch**:
- IRFR430BTM-VB performs well in high voltage power switch applications, and is particularly suitable for use in high voltage power supplies and high voltage DC-DC converters. Its high withstand voltage characteristics ensure safe and reliable operation in high voltage environments while maintaining stable conduction performance, suitable for switching operations in the 650V voltage range.
2. **Power protection circuit**:
- In the power protection circuit, this MOSFET can be used for overvoltage protection and voltage limiting. Its high withstand voltage capability enables it to withstand extreme voltage conditions, thereby effectively protecting other electronic components from overvoltage damage, and is suitable for protection applications in high voltage power systems.
3. **Industrial equipment**:
- In industrial equipment, such as high voltage motor control and high power switch control, the high voltage withstand capability and stable switching performance of IRFR430BTM-VB ensure system reliability and efficiency. It is able to handle high voltage loads and provide reliable switching control, suitable for industrial applications requiring high voltage and high stability.
4. **High Power Electrical Systems**:
- In high power electrical systems, such as inverters and high power power converters, IRFR430BTM-VB is able to handle high voltage and high power loads. Its SJ_Multi-EPI technology provides excellent withstand voltage performance and conduction characteristics, ensuring efficient and reliable operation of the system.
IRFR430BTM-VB is particularly suitable for high voltage and high power applications due to its high withstand voltage and stable performance, providing an ideal solution for electronic systems that require high reliability and voltage protection.
1. **High voltage power switch**:
- IRFR430BTM-VB performs well in high voltage power switch applications, and is particularly suitable for use in high voltage power supplies and high voltage DC-DC converters. Its high withstand voltage characteristics ensure safe and reliable operation in high voltage environments while maintaining stable conduction performance, suitable for switching operations in the 650V voltage range.
2. **Power protection circuit**:
- In the power protection circuit, this MOSFET can be used for overvoltage protection and voltage limiting. Its high withstand voltage capability enables it to withstand extreme voltage conditions, thereby effectively protecting other electronic components from overvoltage damage, and is suitable for protection applications in high voltage power systems.
3. **Industrial equipment**:
- In industrial equipment, such as high voltage motor control and high power switch control, the high voltage withstand capability and stable switching performance of IRFR430BTM-VB ensure system reliability and efficiency. It is able to handle high voltage loads and provide reliable switching control, suitable for industrial applications requiring high voltage and high stability.
4. **High Power Electrical Systems**:
- In high power electrical systems, such as inverters and high power power converters, IRFR430BTM-VB is able to handle high voltage and high power loads. Its SJ_Multi-EPI technology provides excellent withstand voltage performance and conduction characteristics, ensuring efficient and reliable operation of the system.
IRFR430BTM-VB is particularly suitable for high voltage and high power applications due to its high withstand voltage and stable performance, providing an ideal solution for electronic systems that require high reliability and voltage protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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