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IRFR430BTF-VB Product details
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Product Introduction
**IRFR430BTF-VB** is a high voltage N-channel MOSFET in TO252 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 650V and the drain current (ID) reaches 5A. This MOSFET adopts SJ_Multi-EPI technology, has relatively high on-resistance and good switching performance, and is suitable for occasions requiring high voltage tolerance.
**IRFR430BTF-VB** is a high voltage N-channel MOSFET in TO252 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 650V and the drain current (ID) reaches 5A. This MOSFET adopts SJ_Multi-EPI technology, has relatively high on-resistance and good switching performance, and is suitable for occasions requiring high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: IRFR430BTF-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Drain Current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
- **Model**: IRFR430BTF-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Drain Current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Application fields and module examples
1. **High voltage power switch**:
- IRFR430BTF-VB is suitable for high voltage power switch applications. Its 650V drain-source voltage and 5A drain current capability make it suitable for switching control of high voltage power supplies, and can provide stable switching performance in high voltage environments. For example, it can be used in switch modules in high voltage power supply systems to ensure the reliability and safety of power switches.
2. **Industrial power converter**:
- In industrial power converters, this MOSFET can effectively handle power conversion in high voltage environments. Its high withstand voltage characteristics make it suitable for use in industrial-grade power modules such as frequency converters and inverters, providing stable power conversion and control.
3. **Motor drive system**:
- Although the drain current of IRFR430BTF-VB is relatively low, it can still be used in motor drive systems that require high voltage tolerance. In high-voltage motor drive applications, it can effectively control the operation of the motor and provide stable current control, and is suitable for high-voltage motor drive modules.
4. **Battery Management System**:
- In the battery management system, this MOSFET is suitable for applications that require high voltage protection. It can handle battery protection and charge and discharge management under high voltage to ensure the safety and stability of the battery system, and is particularly suitable for battery protection modules in electric vehicles and large energy storage systems.
These application examples demonstrate the performance advantages of IRFR430BTF-VB in high-voltage applications, and are particularly suitable for use in power switches, power converters, motor drives, and battery management, providing high voltage tolerance and stable and reliable solutions.
1. **High voltage power switch**:
- IRFR430BTF-VB is suitable for high voltage power switch applications. Its 650V drain-source voltage and 5A drain current capability make it suitable for switching control of high voltage power supplies, and can provide stable switching performance in high voltage environments. For example, it can be used in switch modules in high voltage power supply systems to ensure the reliability and safety of power switches.
2. **Industrial power converter**:
- In industrial power converters, this MOSFET can effectively handle power conversion in high voltage environments. Its high withstand voltage characteristics make it suitable for use in industrial-grade power modules such as frequency converters and inverters, providing stable power conversion and control.
3. **Motor drive system**:
- Although the drain current of IRFR430BTF-VB is relatively low, it can still be used in motor drive systems that require high voltage tolerance. In high-voltage motor drive applications, it can effectively control the operation of the motor and provide stable current control, and is suitable for high-voltage motor drive modules.
4. **Battery Management System**:
- In the battery management system, this MOSFET is suitable for applications that require high voltage protection. It can handle battery protection and charge and discharge management under high voltage to ensure the safety and stability of the battery system, and is particularly suitable for battery protection modules in electric vehicles and large energy storage systems.
These application examples demonstrate the performance advantages of IRFR430BTF-VB in high-voltage applications, and are particularly suitable for use in power switches, power converters, motor drives, and battery management, providing high voltage tolerance and stable and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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