中文
English
IRFR420BT-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**IRFR420BT-VB** is a high-voltage N-channel MOSFET in a TO252 package, designed to withstand drain-source voltages (VDS) up to 650V. The gate-source voltage (VGS) of this MOSFET is a maximum of ±30V, ensuring its reliability in high-voltage applications. The valve-opening voltage (Vth) is 3.5V, suitable for medium and high voltage switching and control applications. IRFR420BT-VB uses Plannar technology, and its on-resistance (RDS(ON)) is: 2750mΩ at VGS=4.5V and 2200mΩ at VGS=10V. This MOSFET can support a maximum drain current (ID) of 4A, providing stable performance in high voltage and high current applications.
**IRFR420BT-VB** is a high-voltage N-channel MOSFET in a TO252 package, designed to withstand drain-source voltages (VDS) up to 650V. The gate-source voltage (VGS) of this MOSFET is a maximum of ±30V, ensuring its reliability in high-voltage applications. The valve-opening voltage (Vth) is 3.5V, suitable for medium and high voltage switching and control applications. IRFR420BT-VB uses Plannar technology, and its on-resistance (RDS(ON)) is: 2750mΩ at VGS=4.5V and 2200mΩ at VGS=10V. This MOSFET can support a maximum drain current (ID) of 4A, providing stable performance in high voltage and high current applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS=4.5V
- 2200mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
- **Power consumption**: Not specified, usually depends on the heat dissipation conditions of the actual application
- **Maximum operating temperature**: 175°C
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS=4.5V
- 2200mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
- **Power consumption**: Not specified, usually depends on the heat dissipation conditions of the actual application
- **Maximum operating temperature**: 175°C
Domain and module applications：
Applications and modules
1. **High-voltage switching circuits**:
The high drain-source voltage (VDS) capability of the IRFR420BT-VB makes it suitable for high-voltage switching circuits. In power electronics applications, such as high-voltage DC-DC converters and power management systems, this MOSFET can stably handle high-voltage loads and provide reliable switching performance.
2. **Inverter and power conversion**:
In inverter and power conversion applications, the IRFR420BT-VB can handle high-voltage loads and maintain a stable on-resistance. Its high VDS allows it to be used in AC-DC and DC-DC converters, ensuring high efficiency and high stability.
3. **Industrial power systems**:
Industrial power systems often need to handle high-voltage and high-power loads, and the 650V withstand voltage capability of the IRFR420BT-VB makes it perform well in these systems. This MOSFET can be used in a variety of industrial power management modules to provide robust power switching control.
4. **Power Protection Circuit**:
IRFR420BT-VB can play a role in high voltage power protection circuits, such as overvoltage protection circuits. Its high withstand voltage and high current handling capabilities ensure that it can effectively protect the circuit from damage under overvoltage conditions.
**IRFR420BT-VB** is a high voltage MOSFET suitable for high voltage switching and control applications. Its superior withstand voltage performance and stable on-resistance make it perform well in high voltage power conversion, inverters, industrial power systems and protection circuits.
1. **High-voltage switching circuits**:
The high drain-source voltage (VDS) capability of the IRFR420BT-VB makes it suitable for high-voltage switching circuits. In power electronics applications, such as high-voltage DC-DC converters and power management systems, this MOSFET can stably handle high-voltage loads and provide reliable switching performance.
2. **Inverter and power conversion**:
In inverter and power conversion applications, the IRFR420BT-VB can handle high-voltage loads and maintain a stable on-resistance. Its high VDS allows it to be used in AC-DC and DC-DC converters, ensuring high efficiency and high stability.
3. **Industrial power systems**:
Industrial power systems often need to handle high-voltage and high-power loads, and the 650V withstand voltage capability of the IRFR420BT-VB makes it perform well in these systems. This MOSFET can be used in a variety of industrial power management modules to provide robust power switching control.
4. **Power Protection Circuit**:
IRFR420BT-VB can play a role in high voltage power protection circuits, such as overvoltage protection circuits. Its high withstand voltage and high current handling capabilities ensure that it can effectively protect the circuit from damage under overvoltage conditions.
**IRFR420BT-VB** is a high voltage MOSFET suitable for high voltage switching and control applications. Its superior withstand voltage performance and stable on-resistance make it perform well in high voltage power conversion, inverters, industrial power systems and protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
