IRFR420BTM-VB Product details
Product introduction:
IRFR420BTM-VB is a high voltage single N-channel MOSFET in TO252 package and manufactured based on Plannar technology. This MOSFET has a drain-source voltage (VDS) of 650V, which makes it perform well in high voltage applications. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 2200mΩ at a gate-source voltage (VGS) of 10V. This MOSFET is suitable for applications that require high voltage resistance and medium current carrying capability, and can provide reliable performance in high voltage environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: IRFR420BTM-VB
- **Package**: TO252
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2200mΩ@VGS=10V
- 2750mΩ@VGS=4.5V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
- **Power consumption**: Suitable for high voltage applications
- **Operating temperature range**: -55°C Up to +175°C
Domain and module applications:
1. **High voltage switching circuit**: IRFR420BTM-VB is suitable for high voltage switching circuits, such as high voltage switching applications in power supplies. Its 650V withstand voltage allows stable operation in high voltage environments, suitable for AC-DC converters and high voltage DC switching power supplies.
2. **Industrial power system**: In industrial power systems, this MOSFET can be used in power management modules that require high voltage withstand capability. Its higher drain-source voltage and medium on-resistance enable it to effectively handle power switching in industrial applications, ensuring system stability and reliability.
3. **Power converter**: IRFR420BTM-VB is also suitable for power converters, such as high voltage DC-DC converters. Its high withstand voltage characteristics enable it to handle high voltage inputs while providing reliable switching functions to reduce energy losses in power conversion.
4. **Motor drive circuit**: In motor drive circuits, this MOSFET is suitable for motor control and protection circuits. Its high voltage tolerance and medium current carrying capacity can effectively support the operation of the motor and the stability of the protection circuit.
5. **Power supply protection circuit**: IRFR420BTM-VB can be used in power supply protection circuits, especially in overvoltage protection and overcurrent protection systems under high voltage environments. Its high drain-source voltage and medium on-resistance provide a reliable solution for power supply protection.
In summary, IRFR420BTM-VB is a high-voltage MOSFET with stable performance, suitable for high voltage switches, industrial power systems, power converters, motor drive circuits, power supply protection circuits and other fields. Its 650V drain-source voltage and reliable switching performance enable it to perform well in various high voltage applications.
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