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IRFR4104TRLPBF-VB Product details
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IRFR4104TRLPBF-VB Product Introduction
IRFR4104TRLPBF-VB is a high-performance single N-channel MOSFET with a TO252 package type. This MOSFET has excellent current handling capability and low on-resistance, suitable for high-efficiency switching applications. Its drain-source voltage (VDS) is 40V, and the gate-source voltage (VGS) range is ±20V, which can operate stably within a wide gate-source voltage range. The threshold voltage (Vth) of IRFR4104TRLPBF-VB is 2.5V, which enables it to start conducting at a lower gate voltage, suitable for various low-voltage control applications. Its on-resistance is 5mΩ at VGS=10V and 6mΩ at VGS=4.5V, with extremely low on-resistance, which can provide efficient performance in high current applications. Using Trench technology, IRFR4104TRLPBF-VB has excellent switching speed and high performance, suitable for applications with high requirements on power and switching speed.
IRFR4104TRLPBF-VB is a high-performance single N-channel MOSFET with a TO252 package type. This MOSFET has excellent current handling capability and low on-resistance, suitable for high-efficiency switching applications. Its drain-source voltage (VDS) is 40V, and the gate-source voltage (VGS) range is ±20V, which can operate stably within a wide gate-source voltage range. The threshold voltage (Vth) of IRFR4104TRLPBF-VB is 2.5V, which enables it to start conducting at a lower gate voltage, suitable for various low-voltage control applications. Its on-resistance is 5mΩ at VGS=10V and 6mΩ at VGS=4.5V, with extremely low on-resistance, which can provide efficient performance in high current applications. Using Trench technology, IRFR4104TRLPBF-VB has excellent switching speed and high performance, suitable for applications with high requirements on power and switching speed.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IRFR4104TRLPBF-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench
- **Operating temperature range**: According to the actual application environment and heat dissipation design
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench
- **Operating temperature range**: According to the actual application environment and heat dissipation design
Domain and module applications：
Applicable fields and modules
The low on-resistance and high current capability of IRFR4104TRLPBF-VB make it excel in the following fields:
1. **High-efficiency power switch**:
In high-efficiency power switch applications, such as DC-DC converters and switching power modules, the low on-resistance (5mΩ) of IRFR4104TRLPBF-VB can significantly reduce power consumption and heat generation, improving the overall efficiency of the system. In addition, its high current handling capability (85A) enables it to handle large load currents, ensuring stable power conversion.
2. **Electric vehicle (EV) applications**:
In electric vehicle systems, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice. It can be used in battery management systems, motor drive modules, and high-power power conversion, which require efficient and reliable MOSFETs to ensure vehicle performance and endurance.
3. **Computer Power Management**:
IRFR4104TRLPBF-VB is suitable for computer power management and server power modules. Its low on-resistance and high current capability enable it to handle high load currents and provide stable power, ensuring efficient operation and reliability of computer systems.
4. **Industrial Automation Control**:
In industrial automation control systems, IRFR4104TRLPBF-VB can be used as a power switch and load control. Its excellent switching speed and low on-resistance make it suitable for industrial control applications that require high performance and reliability, such as drive motors and control modules.
5. **Communication Equipment**:
In communication equipment, the low on-resistance and high current handling capability of this MOSFET make it suitable for power amplifiers and power regulation modules. It can improve the overall performance and power efficiency of communication equipment, ensuring stable operation of the equipment under high power transmission.
In summary, the high current handling capability and low on-resistance of the IRFR4104TRLPBF-VB MOSFET enable it to excel in areas such as high-efficiency power switching, electric vehicles, power management, industrial automation, and communications equipment. Its excellent performance makes it an ideal choice for a variety of high-power and high-efficiency applications.
The low on-resistance and high current capability of IRFR4104TRLPBF-VB make it excel in the following fields:
1. **High-efficiency power switch**:
In high-efficiency power switch applications, such as DC-DC converters and switching power modules, the low on-resistance (5mΩ) of IRFR4104TRLPBF-VB can significantly reduce power consumption and heat generation, improving the overall efficiency of the system. In addition, its high current handling capability (85A) enables it to handle large load currents, ensuring stable power conversion.
2. **Electric vehicle (EV) applications**:
In electric vehicle systems, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice. It can be used in battery management systems, motor drive modules, and high-power power conversion, which require efficient and reliable MOSFETs to ensure vehicle performance and endurance.
3. **Computer Power Management**:
IRFR4104TRLPBF-VB is suitable for computer power management and server power modules. Its low on-resistance and high current capability enable it to handle high load currents and provide stable power, ensuring efficient operation and reliability of computer systems.
4. **Industrial Automation Control**:
In industrial automation control systems, IRFR4104TRLPBF-VB can be used as a power switch and load control. Its excellent switching speed and low on-resistance make it suitable for industrial control applications that require high performance and reliability, such as drive motors and control modules.
5. **Communication Equipment**:
In communication equipment, the low on-resistance and high current handling capability of this MOSFET make it suitable for power amplifiers and power regulation modules. It can improve the overall performance and power efficiency of communication equipment, ensuring stable operation of the equipment under high power transmission.
In summary, the high current handling capability and low on-resistance of the IRFR4104TRLPBF-VB MOSFET enable it to excel in areas such as high-efficiency power switching, electric vehicles, power management, industrial automation, and communications equipment. Its excellent performance makes it an ideal choice for a variety of high-power and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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