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IRFR3717TRPBF-VB Product details
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Product Introduction
The IRFR3717TRPBF-VB is a high-performance N-channel MOSFET in a TO252 package, which is particularly suitable for low-voltage, high-current applications. Its maximum drain-source voltage (VDS) is 20V, and the gate-source voltage (VGS) range is ±20V. The on-resistance (RDS(ON)) of this MOSFET is very low, at 2.5mΩ at VGS=4.5V, which means it has extremely low power loss and efficient current transmission capability. The turn-on threshold voltage (Vth) of the IRFR3717TRPBF-VB is between 0.5V and 1.5V, allowing fast switching at lower gate voltages. With its maximum drain current (ID) of 120A, this MOSFET is suitable for applications that require high current handling and low power consumption. It uses Trench technology and has excellent conduction performance and switching characteristics.
The IRFR3717TRPBF-VB is a high-performance N-channel MOSFET in a TO252 package, which is particularly suitable for low-voltage, high-current applications. Its maximum drain-source voltage (VDS) is 20V, and the gate-source voltage (VGS) range is ±20V. The on-resistance (RDS(ON)) of this MOSFET is very low, at 2.5mΩ at VGS=4.5V, which means it has extremely low power loss and efficient current transmission capability. The turn-on threshold voltage (Vth) of the IRFR3717TRPBF-VB is between 0.5V and 1.5V, allowing fast switching at lower gate voltages. With its maximum drain current (ID) of 120A, this MOSFET is suitable for applications that require high current handling and low power consumption. It uses Trench technology and has excellent conduction performance and switching characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 3.5mΩ @ VGS=2.5V
- **Maximum drain current (ID)**: 120A
- **Power consumption (Ptot)**: 130W
- **Junction temperature (Tj)**: 175°C
- **Technology**: Trench
- **Operating temperature range**: -55°C to +175°C
- **Package**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 3.5mΩ @ VGS=2.5V
- **Maximum drain current (ID)**: 120A
- **Power consumption (Ptot)**: 130W
- **Junction temperature (Tj)**: 175°C
- **Technology**: Trench
- **Operating temperature range**: -55°C to +175°C
Domain and module applications：
Applications and module examples
1. **Battery management system**: The low on-resistance and high current capability of the IRFR3717TRPBF-VB make it ideal for switching applications in battery management systems. It can be used in battery protection circuits, charger switches, and load switches to help improve the efficiency and safety of battery charging and discharging.
2. **High-efficiency DC-DC converter**: In DC-DC converters, the low RDS(ON) of the MOSFET minimizes power losses, thereby improving conversion efficiency. This MOSFET is suitable for high-current converters such as server power supplies, communication equipment power supplies, and other power modules that require high efficiency.
3. **High-power switching applications**: The high current handling capability of the IRFR3717TRPBF-VB makes it excellent in high-power switching applications. It is suitable for motor drive circuits, power regulation circuits, and other switching applications that require high current handling, helping to improve the overall performance of the system.
4. **Automotive Electronic Systems**: In automotive electronic systems, this MOSFET can be used for power management, battery monitoring, and power distribution systems in electric vehicles. Its low on-resistance and high current capability can effectively improve the reliability and efficiency of the system.
In general, due to its ultra-low on-resistance and high current handling capability, the IRFR3717TRPBF-VB is very suitable for applications requiring high performance and high efficiency, such as battery management, high-efficiency DC-DC conversion, high-power switching, and automotive electronic systems.
1. **Battery management system**: The low on-resistance and high current capability of the IRFR3717TRPBF-VB make it ideal for switching applications in battery management systems. It can be used in battery protection circuits, charger switches, and load switches to help improve the efficiency and safety of battery charging and discharging.
2. **High-efficiency DC-DC converter**: In DC-DC converters, the low RDS(ON) of the MOSFET minimizes power losses, thereby improving conversion efficiency. This MOSFET is suitable for high-current converters such as server power supplies, communication equipment power supplies, and other power modules that require high efficiency.
3. **High-power switching applications**: The high current handling capability of the IRFR3717TRPBF-VB makes it excellent in high-power switching applications. It is suitable for motor drive circuits, power regulation circuits, and other switching applications that require high current handling, helping to improve the overall performance of the system.
4. **Automotive Electronic Systems**: In automotive electronic systems, this MOSFET can be used for power management, battery monitoring, and power distribution systems in electric vehicles. Its low on-resistance and high current capability can effectively improve the reliability and efficiency of the system.
In general, due to its ultra-low on-resistance and high current handling capability, the IRFR3717TRPBF-VB is very suitable for applications requiring high performance and high efficiency, such as battery management, high-efficiency DC-DC conversion, high-power switching, and automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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