IRFR3715ZCTRPBF-VB Product details
Product introduction:
**IRFR3715ZCTRPBF-VB** is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 20V and the gate-source voltage (VGS) is ±20V. The MOSFET has a valve opening voltage (Vth) range of 0.5V to 1.5V. It uses Trench technology and has extremely low on-resistance, which is 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V. It supports drain currents up to 100A and provides excellent power efficiency and reliability. This MOSFET is suitable for circuit designs with strict requirements on low on-resistance and high current handling capabilities.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Power consumption**: Unknown, usually depends on heat dissipation conditions
- **Maximum operating temperature**: 175°C
Domain and module applications:
1. **High-Efficiency Power Management**:
The extremely low RDS(ON) and high current handling capability of the IRFR3715ZCTRPBF-VB make it ideal for use in high-efficiency power management applications such as DC-DC converters and power distribution modules. In these applications, the low on-resistance of the MOSFET helps reduce power loss and heat generation, thereby improving the efficiency and stability of the power supply.
2. **Electric Vehicles and Power Tools**:
In electric vehicles or power tools, the IRFR3715ZCTRPBF-VB is able to handle high current loads, and its low on-resistance ensures efficient power transmission and high performance of the system. In these high-current applications, the low RDS(ON) performance of this MOSFET is particularly important and helps optimize energy utilization.
3. **High-Current Switching**:
The IRFR3715ZCTRPBF-VB is also suitable for circuits that require high current switching, such as switches in battery management systems or high-power switching circuits. In these applications, the high current handling capability and low on-resistance of the MOSFET ensure reliable and efficient switching operation.
4. **Overvoltage protection and power protection**:
In the overvoltage protection circuit, the IRFR3715ZCTRPBF-VB can be used as an efficient overvoltage protection switch, quickly responding to voltage changes to protect the circuit. Its high current handling capability and low RDS(ON) ensure reliable protection of the circuit and prevent damage.
The IRFR3715ZCTRPBF-VB is a MOSFET optimized for high current, low voltage applications, which can provide extremely low on-resistance and high efficiency performance, and is particularly suitable for applications such as power management, electric drive, high current switching and overvoltage protection.
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