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IRFR3712TRPBF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IRFR3712TRPBF-VB is a high-performance N-channel MOSFET in TO252 package. It uses advanced Trench technology and is designed for high-efficiency power switching and conversion applications. This MOSFET has extremely low on-resistance and high current carrying capacity, making it excellent in applications requiring high efficiency and fast response. Its wide threshold voltage range and excellent conduction performance make it very suitable for various power management scenarios.
IRFR3712TRPBF-VB is a high-performance N-channel MOSFET in TO252 package. It uses advanced Trench technology and is designed for high-efficiency power switching and conversion applications. This MOSFET has extremely low on-resistance and high current carrying capacity, making it excellent in applications requiring high efficiency and fast response. Its wide threshold voltage range and excellent conduction performance make it very suitable for various power management scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS=2.5V
- 2.5mΩ @ VGS=4.5V
- **Maximum continuous drain current (ID)**: 120A
- **Technology**: Trench technology
- **Other features**: Provides ultra-low on-resistance and high current handling capability, suitable for switching and power control in high-power applications.
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS=2.5V
- 2.5mΩ @ VGS=4.5V
- **Maximum continuous drain current (ID)**: 120A
- **Technology**: Trench technology
- **Other features**: Provides ultra-low on-resistance and high current handling capability, suitable for switching and power control in high-power applications.
Domain and module applications：
3. Application fields and module examples:
- **Power management**: IRFR3712TRPBF-VB is suitable for various power management applications, such as high-efficiency buck and boost converters. Its extremely low on-resistance reduces power consumption at high currents, thereby improving power conversion efficiency and stability.
- **Automotive electronics**: In automotive electronic systems, this MOSFET can be used for power windows, power seat adjustments, and power distribution modules. Its high current handling capability and low RDS(ON) help improve the system's energy efficiency and response speed, especially in application scenarios that require fast switching and high power control.
- **Industrial control**: IRFR3712TRPBF-VB is ideal for high-power switch control in industrial equipment, such as motor drives and load switches. Its high current capability and low on-resistance help improve the performance and reliability of equipment, especially in industrial environments that require high current handling.
- **Communication equipment**: In the power management system of communication equipment, this MOSFET can be used for power switching and load control, especially in the power modules of base stations and network equipment. Its low RDS(ON) and high current handling capability can effectively reduce energy consumption and ensure the stability and efficient operation of the equipment.
- **Power management**: IRFR3712TRPBF-VB is suitable for various power management applications, such as high-efficiency buck and boost converters. Its extremely low on-resistance reduces power consumption at high currents, thereby improving power conversion efficiency and stability.
- **Automotive electronics**: In automotive electronic systems, this MOSFET can be used for power windows, power seat adjustments, and power distribution modules. Its high current handling capability and low RDS(ON) help improve the system's energy efficiency and response speed, especially in application scenarios that require fast switching and high power control.
- **Industrial control**: IRFR3712TRPBF-VB is ideal for high-power switch control in industrial equipment, such as motor drives and load switches. Its high current capability and low on-resistance help improve the performance and reliability of equipment, especially in industrial environments that require high current handling.
- **Communication equipment**: In the power management system of communication equipment, this MOSFET can be used for power switching and load control, especially in the power modules of base stations and network equipment. Its low RDS(ON) and high current handling capability can effectively reduce energy consumption and ensure the stability and efficient operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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