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IRFR3711ZTRPBF-VB Product details
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IRFR3711ZTRPBF-VB Product Introduction
IRFR3711ZTRPBF-VB is a high-performance single N-channel MOSFET in TO252 package. The drain-source voltage (VDS) of this MOSFET is 20V, and the gate-source voltage (VGS) range is ±20V, which is suitable for high-current and high-efficiency applications. Its threshold voltage (Vth) range is 0.5~1.5V, which allows it to be turned on at a low gate voltage, suitable for various low-voltage control applications. The on-resistance of IRFR3711ZTRPBF-VB is 2.5mΩ at VGS=4.5V and 3.5mΩ at VGS=2.5V. It has extremely low on-resistance, making it excellent in high-current applications. This MOSFET uses Trench technology, which can provide fast switching speed and high efficiency, and is very suitable for occasions requiring high performance and low power consumption.
IRFR3711ZTRPBF-VB is a high-performance single N-channel MOSFET in TO252 package. The drain-source voltage (VDS) of this MOSFET is 20V, and the gate-source voltage (VGS) range is ±20V, which is suitable for high-current and high-efficiency applications. Its threshold voltage (Vth) range is 0.5~1.5V, which allows it to be turned on at a low gate voltage, suitable for various low-voltage control applications. The on-resistance of IRFR3711ZTRPBF-VB is 2.5mΩ at VGS=4.5V and 3.5mΩ at VGS=2.5V. It has extremely low on-resistance, making it excellent in high-current applications. This MOSFET uses Trench technology, which can provide fast switching speed and high efficiency, and is very suitable for occasions requiring high performance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IRFR3711ZTRPBF-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ (VGS=2.5V)
- 2.5mΩ (VGS=4.5V)
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench
- **Operating temperature range**: According to the actual application environment and heat dissipation design
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ (VGS=2.5V)
- 2.5mΩ (VGS=4.5V)
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench
- **Operating temperature range**: According to the actual application environment and heat dissipation design
Domain and module applications：
Applicable fields and modules
The low on-resistance and high current capability of IRFR3711ZTRPBF-VB make it excel in the following fields:
1. **High power switch**:
In high power switch applications that need to handle large currents, IRFR3711ZTRPBF-VB provides extremely low on-resistance and high current capability. This makes it ideal for use in efficient DC-DC converters, power management systems, and switching power modules, which can significantly improve energy efficiency and reduce power consumption.
2. **Electric vehicle (EV) system**:
In electric vehicle systems, the high current handling capability and low on-resistance of IRFR3711ZTRPBF-VB make it an ideal choice. It can be used in battery management systems, motor drives, and high power power conversion, which require efficient and reliable MOSFETs to ensure vehicle performance and endurance.
3. **Computer and Server Power**:
Due to its low on-resistance and high current capability, the IRFR3711ZTRPBF-VB excels in computer and server power management. It can be used in high-efficiency power conversion modules and load switches to ensure the stability and high performance of computer systems.
4. **Industrial Automation**:
In industrial automation equipment, the IRFR3711ZTRPBF-VB can be used as a power switch and load control. Its high current capability and low on-resistance make it suitable for use in industrial control systems that require high performance and high reliability, improving the efficiency and reliability of equipment.
5. **Communication Equipment**:
In communication equipment, the low on-resistance and high switching speed of this MOSFET can improve the efficiency of signal processing. It is suitable for applications such as power amplifiers, power conditioning modules, and signal switches, improving the overall performance and power efficiency of communication equipment.
In summary, the high current handling capability and low on-resistance of the IRFR3711ZTRPBF-VB MOSFET enable it to excel in high-power switching, electric vehicle systems, computer power supplies, industrial automation, and communication equipment. Its excellent performance makes it an ideal choice for a variety of high-efficiency and high-power applications.
The low on-resistance and high current capability of IRFR3711ZTRPBF-VB make it excel in the following fields:
1. **High power switch**:
In high power switch applications that need to handle large currents, IRFR3711ZTRPBF-VB provides extremely low on-resistance and high current capability. This makes it ideal for use in efficient DC-DC converters, power management systems, and switching power modules, which can significantly improve energy efficiency and reduce power consumption.
2. **Electric vehicle (EV) system**:
In electric vehicle systems, the high current handling capability and low on-resistance of IRFR3711ZTRPBF-VB make it an ideal choice. It can be used in battery management systems, motor drives, and high power power conversion, which require efficient and reliable MOSFETs to ensure vehicle performance and endurance.
3. **Computer and Server Power**:
Due to its low on-resistance and high current capability, the IRFR3711ZTRPBF-VB excels in computer and server power management. It can be used in high-efficiency power conversion modules and load switches to ensure the stability and high performance of computer systems.
4. **Industrial Automation**:
In industrial automation equipment, the IRFR3711ZTRPBF-VB can be used as a power switch and load control. Its high current capability and low on-resistance make it suitable for use in industrial control systems that require high performance and high reliability, improving the efficiency and reliability of equipment.
5. **Communication Equipment**:
In communication equipment, the low on-resistance and high switching speed of this MOSFET can improve the efficiency of signal processing. It is suitable for applications such as power amplifiers, power conditioning modules, and signal switches, improving the overall performance and power efficiency of communication equipment.
In summary, the high current handling capability and low on-resistance of the IRFR3711ZTRPBF-VB MOSFET enable it to excel in high-power switching, electric vehicle systems, computer power supplies, industrial automation, and communication equipment. Its excellent performance makes it an ideal choice for a variety of high-efficiency and high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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