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IRFR3711ZPBF-VB Product details
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Product Introduction
**IRFR3711ZPBF-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for low voltage and high current applications. This MOSFET combines extremely low on-resistance and high current carrying capacity, and adopts advanced Trench technology to provide efficient switching performance and low heat generation, suitable for various electronic systems with high requirements for power efficiency and reliability.
**IRFR3711ZPBF-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for low voltage and high current applications. This MOSFET combines extremely low on-resistance and high current carrying capacity, and adopts advanced Trench technology to provide efficient switching performance and low heat generation, suitable for various electronic systems with high requirements for power efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: IRFR3711ZPBF-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
- **Model**: IRFR3711ZPBF-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management module**:
- IRFR3711ZPBF-VB provides efficient current control in power management modules, especially in switching power supplies and DC-DC converters. Its ultra-low on-resistance helps reduce energy loss and heat generation, thereby improving the overall efficiency and stability of the system, and is suitable for high-efficiency power solutions.
2. **Electric Vehicles (EV)**:
- In the battery management and motor drive systems of electric vehicles, the high current carrying capacity and low on-resistance of this MOSFET make it very suitable for handling high power loads. It is able to handle high current requirements during battery charging and discharging, ensuring the safety and performance of the system.
3. **Industrial Automation Equipment**:
- In industrial automation systems, such as motor drives and high-power switching applications, IRFR3711ZPBF-VB provides reliable high current handling capabilities and low heat generation. Its high performance and durability make it suitable for environments with high loads and high-frequency switching operations.
4. **Consumer Electronics**:
- In consumer electronics such as computers and home appliances, the low on-resistance and high current capability of this MOSFET ensure high performance and long life of the device. It can effectively manage power switching, reduce power consumption and improve device reliability.
By combining its high current carrying capability, low on-resistance and compact packaging, the IRFR3711ZPBF-VB is suitable for a variety of electronic systems that require high performance and low power consumption, meeting the stringent performance and reliability requirements of modern electronic devices.
1. **Power management module**:
- IRFR3711ZPBF-VB provides efficient current control in power management modules, especially in switching power supplies and DC-DC converters. Its ultra-low on-resistance helps reduce energy loss and heat generation, thereby improving the overall efficiency and stability of the system, and is suitable for high-efficiency power solutions.
2. **Electric Vehicles (EV)**:
- In the battery management and motor drive systems of electric vehicles, the high current carrying capacity and low on-resistance of this MOSFET make it very suitable for handling high power loads. It is able to handle high current requirements during battery charging and discharging, ensuring the safety and performance of the system.
3. **Industrial Automation Equipment**:
- In industrial automation systems, such as motor drives and high-power switching applications, IRFR3711ZPBF-VB provides reliable high current handling capabilities and low heat generation. Its high performance and durability make it suitable for environments with high loads and high-frequency switching operations.
4. **Consumer Electronics**:
- In consumer electronics such as computers and home appliances, the low on-resistance and high current capability of this MOSFET ensure high performance and long life of the device. It can effectively manage power switching, reduce power consumption and improve device reliability.
By combining its high current carrying capability, low on-resistance and compact packaging, the IRFR3711ZPBF-VB is suitable for a variety of electronic systems that require high performance and low power consumption, meeting the stringent performance and reliability requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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