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IRFR3711TRPBF-VB Product details
Back to previous pageProduct introduction：
1. IRFR3711TRPBF-VB Product Introduction
IRFR3711TRPBF-VB is a high-performance N-channel MOSFET that uses Trench technology and is packaged in a TO252 package. This MOSFET has extremely low on-resistance and high current handling capability, making it suitable for low-voltage and high-current applications. Its drain-source voltage (VDS) is 20V, the gate-source voltage (VGS) is ±20V, the turn-on voltage (Vth) is between 0.5V and 1.5V, the on-resistance (RDS(ON)) is as low as 3.5mΩ (@VGS=2.5V) and 2.5mΩ (@VGS=4.5V), and the drain current (ID) is as high as 120A. These features make the IRFR3711TRPBF-VB an excellent performer in high-current switching applications, especially where fast switching and efficient current control are required.
IRFR3711TRPBF-VB is a high-performance N-channel MOSFET that uses Trench technology and is packaged in a TO252 package. This MOSFET has extremely low on-resistance and high current handling capability, making it suitable for low-voltage and high-current applications. Its drain-source voltage (VDS) is 20V, the gate-source voltage (VGS) is ±20V, the turn-on voltage (Vth) is between 0.5V and 1.5V, the on-resistance (RDS(ON)) is as low as 3.5mΩ (@VGS=2.5V) and 2.5mΩ (@VGS=4.5V), and the drain current (ID) is as high as 120A. These features make the IRFR3711TRPBF-VB an excellent performer in high-current switching applications, especially where fast switching and efficient current control are required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IRFR3711TRPBF-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Drain current (ID)**: 120A
- **Maximum power dissipation (Ptot)**: 100W
- **Operating temperature range**: -55°C to 175°C
- **Gate charge (Qg)**: 45nC @ VGS = 4.5V
- **Input capacitance (Ciss)**: 2000pF
- **Output capacitance (Coss)**: 500pF
- **Reverse transfer capacitance (Crss)**: 60pF
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Drain current (ID)**: 120A
- **Maximum power dissipation (Ptot)**: 100W
- **Operating temperature range**: -55°C to 175°C
- **Gate charge (Qg)**: 45nC @ VGS = 4.5V
- **Input capacitance (Ciss)**: 2000pF
- **Output capacitance (Coss)**: 500pF
- **Reverse transfer capacitance (Crss)**: 60pF
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
The high current handling capability and low on-resistance of the IRFR3711TRPBF-VB make it very suitable for a variety of high-efficiency current control and switching applications. Here are some specific application examples:
1. **Power switch**:
In the power switch module, the IRFR3711TRPBF-VB can efficiently control the switching operation of low-voltage power supplies. Its low RDS(ON) and high ID can reduce power consumption and heat generation, and is suitable for use in high-efficiency DC-DC converters and switching power supplies to ensure efficient and stable operation of the system.
2. **Motor drive**:
This MOSFET performs well in motor drive applications, such as in power tools, electric vehicles, and fan drive systems. Its low on-resistance and high current capability ensure efficient startup and stable operation of the motor, making it suitable for motor control modules that require high current switching.
3. **Load Switch**:
In load switch applications, such as battery protection circuits and high current load switches, the IRFR3711TRPBF-VB can efficiently manage current. Its low RDS(ON) allows fast switching and reduces switching losses, making it suitable for load switch modules that require high current handling capabilities.
4. **Battery Management**:
In battery management systems, the IRFR3711TRPBF-VB can be used for battery charge and discharge control. Its high current capability and low on-resistance can efficiently manage the battery charge and discharge process, improve the overall efficiency and reliability of the system, and is particularly suitable for large-capacity batteries and high-current application scenarios.
5. **Automotive Electronics**:
In automotive electronic systems, such as power seats, window lifts, and other low-voltage motor control systems, the IRFR3711TRPBF-VB can provide a reliable switching solution. Its excellent switching performance and high current capability enable it to meet the requirements of automotive electronic systems for efficient current control.
IRFR3711TRPBF-VB, with its excellent performance, is suitable for a variety of application scenarios that require high current handling and low voltage operation, providing efficient and reliable switching solutions for various electronic systems.
The high current handling capability and low on-resistance of the IRFR3711TRPBF-VB make it very suitable for a variety of high-efficiency current control and switching applications. Here are some specific application examples:
1. **Power switch**:
In the power switch module, the IRFR3711TRPBF-VB can efficiently control the switching operation of low-voltage power supplies. Its low RDS(ON) and high ID can reduce power consumption and heat generation, and is suitable for use in high-efficiency DC-DC converters and switching power supplies to ensure efficient and stable operation of the system.
2. **Motor drive**:
This MOSFET performs well in motor drive applications, such as in power tools, electric vehicles, and fan drive systems. Its low on-resistance and high current capability ensure efficient startup and stable operation of the motor, making it suitable for motor control modules that require high current switching.
3. **Load Switch**:
In load switch applications, such as battery protection circuits and high current load switches, the IRFR3711TRPBF-VB can efficiently manage current. Its low RDS(ON) allows fast switching and reduces switching losses, making it suitable for load switch modules that require high current handling capabilities.
4. **Battery Management**:
In battery management systems, the IRFR3711TRPBF-VB can be used for battery charge and discharge control. Its high current capability and low on-resistance can efficiently manage the battery charge and discharge process, improve the overall efficiency and reliability of the system, and is particularly suitable for large-capacity batteries and high-current application scenarios.
5. **Automotive Electronics**:
In automotive electronic systems, such as power seats, window lifts, and other low-voltage motor control systems, the IRFR3711TRPBF-VB can provide a reliable switching solution. Its excellent switching performance and high current capability enable it to meet the requirements of automotive electronic systems for efficient current control.
IRFR3711TRPBF-VB, with its excellent performance, is suitable for a variety of application scenarios that require high current handling and low voltage operation, providing efficient and reliable switching solutions for various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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