IRFR3710STRRPBF-VB Product details
Product introduction:
The IRFR3710STRRPBF-VB is a high-performance N-channel MOSFET in a TO252 package, designed for high current and low voltage applications. It has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) range of ±20V. The on-resistance (RDS(ON)) of this MOSFET is extremely low, at 18mΩ at VGS=10V, ensuring efficient current transfer and minimal power loss. The turn-on threshold voltage (Vth) of the IRFR3710STRRPBF-VB is 1.8V, which supports low gate voltage operation, enabling it to respond quickly to switching control signals. With its maximum drain current (ID) of 45A, it is suitable for applications that require high current handling, and uses Trench technology with excellent conduction performance and switching characteristics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=10V
- **Maximum drain current (ID)**: 45A
- **Power consumption (Ptot)**: 150W
- **Junction temperature (Tj)**: 175°C
- **Technology**: Trench
- **Operating temperature range**: -55°C to +175°C
Domain and module applications:
1. **High-efficiency DC-DC converters**: The low on-resistance and high current handling capability of the IRFR3710STRRPBF-VB make it ideal for high-efficiency DC-DC converters. This can significantly improve conversion efficiency and reduce power losses, and is widely used in computer power supplies, communication equipment, and various battery-powered systems.
2. **Electric vehicles and battery management systems**: In electric vehicles and battery management systems, the high current capability and low conduction loss of MOSFETs are critical to improving system energy efficiency. The IRFR3710STRRPBF-VB can be used as a battery switch, charger switch, and power management module to optimize the battery charging and discharging process and improve overall system performance.
3. **Industrial power switch**: This MOSFET performs well in industrial power switch applications. Due to its high current handling capability and low power consumption, it is suitable for power switching and load control of industrial equipment, which can effectively improve system reliability and efficiency.
4. **High-frequency switching circuit**: In high-frequency switching circuits, the fast switching characteristics and low gate voltage turn-on characteristics of IRFR3710STRRPBF-VB make it an ideal choice. It is widely used in high-frequency power converters, signal conditioning circuits, and high-frequency switching power supplies to improve the response speed and efficiency of the circuit.
In general, due to its high current handling capability and low on-resistance, IRFR3710STRRPBF-VB is very suitable for a variety of high-performance applications such as DC-DC conversion, electric vehicles, battery management, industrial power switches, and high-frequency switching circuits.
Technical support:
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