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IRFR3709ZT-VB Product details
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IRFR3709ZT-VB is a high-performance N-channel MOSFET in TO252 package. It is designed for low voltage and high current applications, providing a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. The MOSFET has a valve opening voltage (Vth) of 1.7V and uses Trench technology. It has an extremely low on-resistance of 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, supporting a drain current of up to 100A. The IRFR3709ZT-VB is designed to provide extremely low power consumption and high performance in high current applications.
**
IRFR3709ZT-VB is a high-performance N-channel MOSFET in TO252 package. It is designed for low voltage and high current applications, providing a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. The MOSFET has a valve opening voltage (Vth) of 1.7V and uses Trench technology. It has an extremely low on-resistance of 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, supporting a drain current of up to 100A. The IRFR3709ZT-VB is designed to provide extremely low power consumption and high performance in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Power consumption**: 50W
- **Maximum operating temperature**: 175°C
**
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Power consumption**: 50W
- **Maximum operating temperature**: 175°C
**
Domain and module applications：
**
1. **High-efficiency power converters**: The ultra-low RDS(ON) and high drain current handling capability of the IRFR3709ZT-VB make it ideal for use in high-efficiency power converters such as DC-DC converters and power management modules. In these applications, the low on-resistance of the MOSFET can significantly reduce power consumption and heat generation, improving the efficiency and stability of the power supply.
2. **Electric drive systems**: In electric drive systems such as electric vehicles, power tools, etc., the IRFR3709ZT-VB is able to handle high current loads, and its low RDS(ON) ensures efficient power transmission, reduces energy losses and improves the overall performance of the system. This feature is particularly important in applications that require high current and high efficiency.
3. **High-current switches**: This MOSFET is also suitable for high-current switching applications, such as switches in battery management systems or high-power switching circuits. In these scenarios, the low on-resistance of the IRFR3709ZT-VB ensures efficient switching performance while being able to handle current loads up to 100A.
4. **Overvoltage protection circuit**: In circuits that require overvoltage protection, the IRFR3709ZT-VB can act as an effective overvoltage protection switch to prevent circuit damage. Its high current handling capability and low on-resistance enable it to respond quickly to voltage changes and provide reliable protection.
The IRFR3709ZT-VB is a MOSFET that is extremely suitable for high current and low voltage applications, especially in high-efficiency power conversion, electric drive, high current switching and overvoltage protection circuits.
1. **High-efficiency power converters**: The ultra-low RDS(ON) and high drain current handling capability of the IRFR3709ZT-VB make it ideal for use in high-efficiency power converters such as DC-DC converters and power management modules. In these applications, the low on-resistance of the MOSFET can significantly reduce power consumption and heat generation, improving the efficiency and stability of the power supply.
2. **Electric drive systems**: In electric drive systems such as electric vehicles, power tools, etc., the IRFR3709ZT-VB is able to handle high current loads, and its low RDS(ON) ensures efficient power transmission, reduces energy losses and improves the overall performance of the system. This feature is particularly important in applications that require high current and high efficiency.
3. **High-current switches**: This MOSFET is also suitable for high-current switching applications, such as switches in battery management systems or high-power switching circuits. In these scenarios, the low on-resistance of the IRFR3709ZT-VB ensures efficient switching performance while being able to handle current loads up to 100A.
4. **Overvoltage protection circuit**: In circuits that require overvoltage protection, the IRFR3709ZT-VB can act as an effective overvoltage protection switch to prevent circuit damage. Its high current handling capability and low on-resistance enable it to respond quickly to voltage changes and provide reliable protection.
The IRFR3709ZT-VB is a MOSFET that is extremely suitable for high current and low voltage applications, especially in high-efficiency power conversion, electric drive, high current switching and overvoltage protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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