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IRFR3709ZCTRPBF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IRFR3709ZCTRPBF-VB is a high-performance N-channel MOSFET in TO252 package. It uses advanced Trench technology and is designed for high-efficiency power conversion and switching applications. This MOSFET has extremely low on-resistance and high current carrying capacity, making it ideal for power management systems that require high efficiency and fast response. Its ultra-low RDS(ON) and high current handling capability make it an ideal choice for many high-performance applications.
IRFR3709ZCTRPBF-VB is a high-performance N-channel MOSFET in TO252 package. It uses advanced Trench technology and is designed for high-efficiency power conversion and switching applications. This MOSFET has extremely low on-resistance and high current carrying capacity, making it ideal for power management systems that require high efficiency and fast response. Its ultra-low RDS(ON) and high current handling capability make it an ideal choice for many high-performance applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 100A
- **Technology**: Trench technology
- **Other features**: Provides ultra-low on-resistance and high current handling capability, suitable for high power and high-performance applications.
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 100A
- **Technology**: Trench technology
- **Other features**: Provides ultra-low on-resistance and high current handling capability, suitable for high power and high-performance applications.
Domain and module applications：
3. Application fields and module examples:
- **Power management**: IRFR3709ZCTRPBF-VB can be used in high-efficiency power converters, such as buck converters and boost converters. Its extremely low RDS(ON) enables effective reduction of power consumption in high current applications and improves overall system efficiency.
- **Automotive electronics**: In automotive electronic systems, this MOSFET is suitable for high-power switch control, such as power windows, seat adjustment systems, and power distribution modules. Its high current carrying capacity and low on-resistance help improve the energy efficiency and response speed of automotive electronic systems.
- **Industrial control**: In the field of industrial control, IRFR3709ZCTRPBF-VB can be used for motor drive and load switching. Due to its high current capability and fast switching characteristics, it can stably drive high-power loads and improve the performance and reliability of industrial equipment.
- **Communication equipment**: This MOSFET is suitable for power management and switch control in communication equipment, such as power switches in base stations and power modules for network equipment. Its low RDS(ON) and high current capability help reduce power consumption and ensure device stability and efficiency.
- **Power management**: IRFR3709ZCTRPBF-VB can be used in high-efficiency power converters, such as buck converters and boost converters. Its extremely low RDS(ON) enables effective reduction of power consumption in high current applications and improves overall system efficiency.
- **Automotive electronics**: In automotive electronic systems, this MOSFET is suitable for high-power switch control, such as power windows, seat adjustment systems, and power distribution modules. Its high current carrying capacity and low on-resistance help improve the energy efficiency and response speed of automotive electronic systems.
- **Industrial control**: In the field of industrial control, IRFR3709ZCTRPBF-VB can be used for motor drive and load switching. Due to its high current capability and fast switching characteristics, it can stably drive high-power loads and improve the performance and reliability of industrial equipment.
- **Communication equipment**: This MOSFET is suitable for power management and switch control in communication equipment, such as power switches in base stations and power modules for network equipment. Its low RDS(ON) and high current capability help reduce power consumption and ensure device stability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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