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IRFR3708TRPBF-VB Product details
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Product Introduction
**IRFR3708TRPBF-VB** is a high-performance N-channel MOSFET in TO252 package, designed for high current and low voltage applications. It has a maximum drain-source voltage (VDS) of 30V and a drain current (ID) of up to 80A. This MOSFET uses Trench technology, has extremely low on-resistance and excellent switching performance, and is very suitable for applications requiring efficient current transmission and switching control.
**IRFR3708TRPBF-VB** is a high-performance N-channel MOSFET in TO252 package, designed for high current and low voltage applications. It has a maximum drain-source voltage (VDS) of 30V and a drain current (ID) of up to 80A. This MOSFET uses Trench technology, has extremely low on-resistance and excellent switching performance, and is very suitable for applications requiring efficient current transmission and switching control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: IRFR3708TRPBF-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology**: Trench technology
- **Model**: IRFR3708TRPBF-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
1. **High-efficiency Power Management**:
- IRFR3708TRPBF-VB excels in high-efficiency power management systems. Its low on-resistance (5mΩ @ VGS = 10V) helps reduce power loss and improve power conversion efficiency. It is suitable for power switches and high-efficiency power converters to ensure stable and efficient power transmission.
2. **DC-DC Converter**:
- Due to its high current capability of 80A and low on-resistance, IRFR3708TRPBF-VB is an ideal switching element in DC-DC converters. It is able to provide efficient voltage conversion and is particularly suitable for applications requiring high power density, such as server power supplies and industrial power modules.
3. **Motor Drive Control**:
- In motor drive systems, the high current handling capability and low on-resistance of this MOSFET ensure high efficiency of motor drive. It is suitable for motor drive modules that require precise control and high current, providing stable current transmission and reducing power loss.
4. **Battery Management System**:
- IRFR3708TRPBF-VB is also suitable for battery management systems. It can effectively control the battery charge and discharge process and protect the battery from over-current and over-voltage. Its low on-resistance helps improve battery charge and discharge efficiency and ensures long life and high performance of the battery system.
These application examples demonstrate the excellent performance of IRFR3708TRPBF-VB in high current and low voltage applications, suitable for power management, DC-DC converters, motor drives and battery management, providing efficient and reliable solutions.
1. **High-efficiency Power Management**:
- IRFR3708TRPBF-VB excels in high-efficiency power management systems. Its low on-resistance (5mΩ @ VGS = 10V) helps reduce power loss and improve power conversion efficiency. It is suitable for power switches and high-efficiency power converters to ensure stable and efficient power transmission.
2. **DC-DC Converter**:
- Due to its high current capability of 80A and low on-resistance, IRFR3708TRPBF-VB is an ideal switching element in DC-DC converters. It is able to provide efficient voltage conversion and is particularly suitable for applications requiring high power density, such as server power supplies and industrial power modules.
3. **Motor Drive Control**:
- In motor drive systems, the high current handling capability and low on-resistance of this MOSFET ensure high efficiency of motor drive. It is suitable for motor drive modules that require precise control and high current, providing stable current transmission and reducing power loss.
4. **Battery Management System**:
- IRFR3708TRPBF-VB is also suitable for battery management systems. It can effectively control the battery charge and discharge process and protect the battery from over-current and over-voltage. Its low on-resistance helps improve battery charge and discharge efficiency and ensures long life and high performance of the battery system.
These application examples demonstrate the excellent performance of IRFR3708TRPBF-VB in high current and low voltage applications, suitable for power management, DC-DC converters, motor drives and battery management, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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