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IRFR3708TRLPBF-VB Product details
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1. IRFR3708TRLPBF-VB Product Introduction
IRFR3708TRLPBF-VB is a high-performance N-channel MOSFET using Trench technology and packaged in a TO252 package. This MOSFET has high current handling capability and extremely low on-resistance, and is suitable for applications requiring efficient current switching and low-voltage operation. Its drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) is ±20V, the turn-on voltage (Vth) is 1.7V, the on-resistance (RDS(ON)) is 6mΩ (@VGS=4.5V) and 5mΩ (@VGS=10V), and the drain current (ID) is up to 80A. These features make the IRFR3708TRLPBF-VB an ideal choice for high current and low voltage switching applications.
IRFR3708TRLPBF-VB is a high-performance N-channel MOSFET using Trench technology and packaged in a TO252 package. This MOSFET has high current handling capability and extremely low on-resistance, and is suitable for applications requiring efficient current switching and low-voltage operation. Its drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) is ±20V, the turn-on voltage (Vth) is 1.7V, the on-resistance (RDS(ON)) is 6mΩ (@VGS=4.5V) and 5mΩ (@VGS=10V), and the drain current (ID) is up to 80A. These features make the IRFR3708TRLPBF-VB an ideal choice for high current and low voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IRFR3708TRLPBF-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Maximum power dissipation (Ptot)**: 85W
- **Operating temperature range**: -55°C to 175°C
- **Gate charge (Qg)**: 50nC @ VGS = 4.5V
- **Input capacitance (Ciss)**: 2500pF
- **Output capacitance (Coss)**: 550pF
- **Reverse transfer capacitance (Crss)**: 70pF
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Maximum power dissipation (Ptot)**: 85W
- **Operating temperature range**: -55°C to 175°C
- **Gate charge (Qg)**: 50nC @ VGS = 4.5V
- **Input capacitance (Ciss)**: 2500pF
- **Output capacitance (Coss)**: 550pF
- **Reverse transfer capacitance (Crss)**: 70pF
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
IRFR3708TRLPBF-VB is suitable for a variety of fields and modules that require efficient current control and low-voltage operation due to its low on-resistance, high current capability and low turn-on voltage. Here are some application examples:
1. **Power management**:
In DC-DC converters and switching power supplies, IRFR3708TRLPBF-VB can provide efficient current switching and conversion, and is particularly suitable for power management modules for high current loads. The low RDS(ON) and high ID characteristics of this MOSFET can reduce power consumption and improve conversion efficiency, making it suitable for consumer electronics, computer power supplies and battery-powered devices.
2. **Motor drive**:
In motor drive applications, IRFR3708TRLPBF-VB can be used as a switching element in low-voltage motor drive systems. Its high current handling capability and low on-resistance ensure efficient motor starting and control, suitable for electric vehicles, fan drives and other motor control modules.
3. **Load Switch**:
In situations where high current loads need to be controlled, such as battery protection circuits and power switches, the IRFR3708TRLPBF-VB provides a stable and efficient solution. Low RDS(ON) and high current handling capability enable it to quickly switch high current loads, making it suitable for load switch modules in industrial equipment and consumer electronics.
4. **Battery Management**:
In battery management systems, the IRFR3708TRLPBF-VB can be used for battery charge and discharge control. Its high current capability and low on-resistance can effectively manage the battery charge and discharge process, improving the overall efficiency and reliability of the system.
5. **Automotive Electronics**:
This MOSFET performs well in automotive electronic systems, especially in low voltage electrical systems, such as electric seats, window lifts, and other low voltage motor control systems in cars. Its excellent switching performance and high current capability can meet the needs of automotive electronic systems for efficient current control.
The high performance features of the IRFR3708TRLPBF-VB enable it to provide a reliable current switching solution in multiple application scenarios, especially suitable for applications that require high current handling and low voltage operation.
IRFR3708TRLPBF-VB is suitable for a variety of fields and modules that require efficient current control and low-voltage operation due to its low on-resistance, high current capability and low turn-on voltage. Here are some application examples:
1. **Power management**:
In DC-DC converters and switching power supplies, IRFR3708TRLPBF-VB can provide efficient current switching and conversion, and is particularly suitable for power management modules for high current loads. The low RDS(ON) and high ID characteristics of this MOSFET can reduce power consumption and improve conversion efficiency, making it suitable for consumer electronics, computer power supplies and battery-powered devices.
2. **Motor drive**:
In motor drive applications, IRFR3708TRLPBF-VB can be used as a switching element in low-voltage motor drive systems. Its high current handling capability and low on-resistance ensure efficient motor starting and control, suitable for electric vehicles, fan drives and other motor control modules.
3. **Load Switch**:
In situations where high current loads need to be controlled, such as battery protection circuits and power switches, the IRFR3708TRLPBF-VB provides a stable and efficient solution. Low RDS(ON) and high current handling capability enable it to quickly switch high current loads, making it suitable for load switch modules in industrial equipment and consumer electronics.
4. **Battery Management**:
In battery management systems, the IRFR3708TRLPBF-VB can be used for battery charge and discharge control. Its high current capability and low on-resistance can effectively manage the battery charge and discharge process, improving the overall efficiency and reliability of the system.
5. **Automotive Electronics**:
This MOSFET performs well in automotive electronic systems, especially in low voltage electrical systems, such as electric seats, window lifts, and other low voltage motor control systems in cars. Its excellent switching performance and high current capability can meet the needs of automotive electronic systems for efficient current control.
The high performance features of the IRFR3708TRLPBF-VB enable it to provide a reliable current switching solution in multiple application scenarios, especially suitable for applications that require high current handling and low voltage operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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