IRFR3706CTRPBF-VB Product details
Product introduction:
IRFR3706CTRPBF-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage, high current applications. Its drain-source voltage (VDS) is 20V, and the gate-source voltage (VGS) range is ±20V. This MOSFET has an extremely low on-resistance (RDS(ON)), which is only 4.5mΩ at VGS=4.5V, suitable for efficient switching and current handling. The turn-on threshold voltage (Vth) of IRFR3706CTRPBF-VB is between 0.5V and 1.5V, supports low gate voltage operation, and can respond quickly to switch control signals. Its maximum drain current (ID) can reach 100A, and it uses Trench technology to provide excellent conduction performance and efficient switching characteristics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Power consumption (Ptot)**: 100W
- **Junction temperature (Tj)**: 175°C
- **Technology**: Trench
- **Operating temperature range**: -55°C to +175°C
Domain and module applications:
1. **High Efficiency DC-DC Converters**: The IRFR3706CTRPBF-VB is particularly suitable for high efficiency DC-DC converters due to its extremely low on-resistance and high current handling capability. This makes it particularly effective in battery-powered devices, such as mobile devices and portable electronics, where it can significantly improve conversion efficiency and reduce energy losses.
2. **Electric Vehicles and Battery Management Systems**: In electric vehicles and advanced battery management systems, the high current capability and low on-resistance of MOSFETs are critical to improving overall energy efficiency and extending battery life. The IRFR3706CTRPBF-VB can be used as a key component in battery switches, charger switches, and power management modules.
3. **Power Switches and Load Switches**: Its high current handling capability and low conduction losses make this MOSFET ideal for a variety of power switch and load switch applications, including power control and load switching in industrial equipment, home appliances, and consumer electronics.
4. **High-frequency switching circuit**: In high-frequency switching circuits, the low gate-source voltage turn-on characteristics and high switching speed of IRFR3706CTRPBF-VB make it suitable for high-frequency switching applications, such as high-frequency power converters and signal conditioning circuits.
In general, the high current handling capability and extremely low on-resistance of IRFR3706CTRPBF-VB make it an ideal choice for efficient switching circuit design, and it is widely used in DC-DC conversion, electric vehicles, battery management, power switches, and high-frequency switching circuits.
Technical support:
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