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IRFR3706CPBF-VB Product details
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IRFR3706CPBF-VB MOSFET Product Introduction
IRFR3706CPBF-VB is a high-performance single N-channel MOSFET in TO252 package, manufactured based on advanced Trench technology. This MOSFET has a drain-source voltage (VDS) of 20V and a wide threshold voltage range (Vth) from 0.5V to 1.5V, enabling it to operate stably at lower gate-source voltages. The IRFR3706CPBF-VB has an on-resistance of 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V, and can withstand drain currents up to 100A. Its low on-resistance and high current handling capability make it ideal for applications requiring high efficiency and high power density.
IRFR3706CPBF-VB is a high-performance single N-channel MOSFET in TO252 package, manufactured based on advanced Trench technology. This MOSFET has a drain-source voltage (VDS) of 20V and a wide threshold voltage range (Vth) from 0.5V to 1.5V, enabling it to operate stably at lower gate-source voltages. The IRFR3706CPBF-VB has an on-resistance of 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V, and can withstand drain currents up to 100A. Its low on-resistance and high current handling capability make it ideal for applications requiring high efficiency and high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IRFR3706CPBF-VB Detailed parameter description
- **Model**: IRFR3706CPBF-VB
- **Package**: TO252
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ@VGS=2.5V
- 4.5mΩ@VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Power consumption**: Suitable for high power density applications
- **Operating temperature range**: -55°C to +175°C
- **Model**: IRFR3706CPBF-VB
- **Package**: TO252
- **MOSFET configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ@VGS=2.5V
- 4.5mΩ@VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Power consumption**: Suitable for high power density applications
- **Operating temperature range**: -55°C to +175°C
Domain and module applications：
Applications and modules
1. **High-power switching power supply**: The low on-resistance and high current carrying capacity of IRFR3706CPBF-VB make it very suitable for high-power switching power supply. It can effectively reduce the power loss generated during the switching process and improve the efficiency and reliability of the system.
2. **Electric Vehicle and Motor Drive**: In electric vehicle and motor drive applications, this MOSFET can handle high current loads and maintain low on-resistance, thereby improving the efficiency and performance of the drive system. It is suitable for electric power steering systems, motor controllers and battery management systems.
3. **Industrial Power Management**: IRFR3706CPBF-VB can be used in various industrial power management systems, such as UPS (Uninterruptible Power Supply) and power distribution units. Its high current capability and low on-resistance ensure stability and reliability under high load conditions.
4. **Computer and communication equipment**: In computer and communication equipment, IRFR3706CPBF-VB can be used as an efficient power switch and regulator, especially in applications that require fast switching and high current carrying capacity, such as power modules and power management of communication equipment.
5. **Battery protection circuit**: Due to its low on-resistance and high current capability, IRFR3706CPBF-VB is also suitable for battery protection circuits. It can effectively handle high currents during battery charging and discharging, protecting the battery from overcurrent and overheating.
In short, IRFR3706CPBF-VB is a superior MOSFET suitable for a variety of applications requiring high efficiency and high power density. Its low on-resistance and high current carrying capacity make it widely used in switching power supplies, electric vehicles, motor drives, industrial power management, and battery protection circuits.
1. **High-power switching power supply**: The low on-resistance and high current carrying capacity of IRFR3706CPBF-VB make it very suitable for high-power switching power supply. It can effectively reduce the power loss generated during the switching process and improve the efficiency and reliability of the system.
2. **Electric Vehicle and Motor Drive**: In electric vehicle and motor drive applications, this MOSFET can handle high current loads and maintain low on-resistance, thereby improving the efficiency and performance of the drive system. It is suitable for electric power steering systems, motor controllers and battery management systems.
3. **Industrial Power Management**: IRFR3706CPBF-VB can be used in various industrial power management systems, such as UPS (Uninterruptible Power Supply) and power distribution units. Its high current capability and low on-resistance ensure stability and reliability under high load conditions.
4. **Computer and communication equipment**: In computer and communication equipment, IRFR3706CPBF-VB can be used as an efficient power switch and regulator, especially in applications that require fast switching and high current carrying capacity, such as power modules and power management of communication equipment.
5. **Battery protection circuit**: Due to its low on-resistance and high current capability, IRFR3706CPBF-VB is also suitable for battery protection circuits. It can effectively handle high currents during battery charging and discharging, protecting the battery from overcurrent and overheating.
In short, IRFR3706CPBF-VB is a superior MOSFET suitable for a variety of applications requiring high efficiency and high power density. Its low on-resistance and high current carrying capacity make it widely used in switching power supplies, electric vehicles, motor drives, industrial power management, and battery protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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