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IRFR3704ZPBF-VB Product details
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Product Introduction
**IRFR3704ZPBF-VB** is a high-performance N-Channel MOSFET in a compact TO252 package, designed for low voltage, high current applications. This MOSFET has extremely low on-resistance and fast switching performance, suitable for applications requiring efficient power management. Its Trench technology ensures high power handling capability and low losses, making it an ideal choice for consumer electronics and industrial equipment.
**IRFR3704ZPBF-VB** is a high-performance N-Channel MOSFET in a compact TO252 package, designed for low voltage, high current applications. This MOSFET has extremely low on-resistance and fast switching performance, suitable for applications requiring efficient power management. Its Trench technology ensures high power handling capability and low losses, making it an ideal choice for consumer electronics and industrial equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: IRFR3704ZPBF-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Model**: IRFR3704ZPBF-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Mobile device power management**:
- IRFR3704ZPBF-VB is ideal for use in power management modules for mobile devices such as smartphones and tablets. Its low on-resistance and low threshold voltage ensure maximum power conversion efficiency, thereby extending the battery life of the device.
2. **Automotive electronic systems**:
- In automotive electronic systems, especially in car audio, infotainment systems and low-voltage electrical modules, this MOSFET is able to handle higher current demands while maintaining low power consumption and heat generation. Its durability and high efficiency enable it to perform well in harsh working environments.
3. **Battery Management System (BMS)**:
- In battery management systems, IRFR3704ZPBF-VB can be used for battery charge and discharge management, ensuring smooth current transmission and efficient regulation. Its high current handling capability and low on-resistance reduce losses and improve the overall energy efficiency of the battery pack.
4. **LED driver module**:
- In LED driver applications, this MOSFET can effectively reduce switching losses and ensure the stability and brightness control of LED modules under different voltages. This is especially important for energy-efficient and long-life LED lighting systems.
With its low on-resistance, high current carrying capacity and compact package, the IRFR3704ZPBF-VB is suitable for a variety of power management, high-efficiency drive and low-voltage circuit applications, especially in portable devices and automotive electronics.
1. **Mobile device power management**:
- IRFR3704ZPBF-VB is ideal for use in power management modules for mobile devices such as smartphones and tablets. Its low on-resistance and low threshold voltage ensure maximum power conversion efficiency, thereby extending the battery life of the device.
2. **Automotive electronic systems**:
- In automotive electronic systems, especially in car audio, infotainment systems and low-voltage electrical modules, this MOSFET is able to handle higher current demands while maintaining low power consumption and heat generation. Its durability and high efficiency enable it to perform well in harsh working environments.
3. **Battery Management System (BMS)**:
- In battery management systems, IRFR3704ZPBF-VB can be used for battery charge and discharge management, ensuring smooth current transmission and efficient regulation. Its high current handling capability and low on-resistance reduce losses and improve the overall energy efficiency of the battery pack.
4. **LED driver module**:
- In LED driver applications, this MOSFET can effectively reduce switching losses and ensure the stability and brightness control of LED modules under different voltages. This is especially important for energy-efficient and long-life LED lighting systems.
With its low on-resistance, high current carrying capacity and compact package, the IRFR3704ZPBF-VB is suitable for a variety of power management, high-efficiency drive and low-voltage circuit applications, especially in portable devices and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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