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IRFR3704ZCPBF-VB Product details
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Product Introduction
**IRFR3704ZCPBF-VB** is a high-performance N-channel MOSFET in a TO252 package designed for low voltage and high current applications. It has a drain-source voltage (VDS) of 20V, a maximum drain current (ID) of up to 100A, and very low on-resistance. The device uses Trench technology, has excellent switching performance and low loss characteristics, and is very suitable for applications that require efficient current transmission.
**IRFR3704ZCPBF-VB** is a high-performance N-channel MOSFET in a TO252 package designed for low voltage and high current applications. It has a drain-source voltage (VDS) of 20V, a maximum drain current (ID) of up to 100A, and very low on-resistance. The device uses Trench technology, has excellent switching performance and low loss characteristics, and is very suitable for applications that require efficient current transmission.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: IRFR3704ZCPBF-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
- **Model**: IRFR3704ZCPBF-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Low voltage, high current power management**:
- Due to its extremely low on-resistance and high current capability, the IRFR3704ZCPBF-VB excels in low voltage, high current power management systems. Its 4.5mΩ on-resistance (VGS = 4.5V) greatly reduces losses during current transmission, making it suitable for high-efficiency power switch and converter designs.
2. **DC-DC converter**:
- In a DC-DC converter, this MOSFET acts as the main switching element to improve the efficiency and stability of voltage conversion. Its high current capability of 100A and extremely low on-resistance ensure high power conversion, making it particularly suitable for applications that require high efficiency conversion, such as servers, communication equipment, and data centers.
3. **Motor drive control**:
- The IRFR3704ZCPBF-VB is suitable for motor drive systems that require high current control. It is able to drive high current motors under low voltage conditions, ensuring smooth motor start-up and operation, while reducing heat loss and improving efficiency due to its low on-resistance.
4. **Battery Management System**:
- In battery management and protection systems, this MOSFET is able to efficiently control the transmission and management of current in low-voltage battery systems. Its high current capability and low on-resistance make it suitable for battery charge and discharge management modules, ensuring efficient energy transmission and extended battery life.
These application examples show that the IRFR3704ZCPBF-VB is suitable for various fields of low voltage and high current, especially in power management, DC-DC converters, motor drives and battery management systems, providing efficient and reliable performance.
1. **Low voltage, high current power management**:
- Due to its extremely low on-resistance and high current capability, the IRFR3704ZCPBF-VB excels in low voltage, high current power management systems. Its 4.5mΩ on-resistance (VGS = 4.5V) greatly reduces losses during current transmission, making it suitable for high-efficiency power switch and converter designs.
2. **DC-DC converter**:
- In a DC-DC converter, this MOSFET acts as the main switching element to improve the efficiency and stability of voltage conversion. Its high current capability of 100A and extremely low on-resistance ensure high power conversion, making it particularly suitable for applications that require high efficiency conversion, such as servers, communication equipment, and data centers.
3. **Motor drive control**:
- The IRFR3704ZCPBF-VB is suitable for motor drive systems that require high current control. It is able to drive high current motors under low voltage conditions, ensuring smooth motor start-up and operation, while reducing heat loss and improving efficiency due to its low on-resistance.
4. **Battery Management System**:
- In battery management and protection systems, this MOSFET is able to efficiently control the transmission and management of current in low-voltage battery systems. Its high current capability and low on-resistance make it suitable for battery charge and discharge management modules, ensuring efficient energy transmission and extended battery life.
These application examples show that the IRFR3704ZCPBF-VB is suitable for various fields of low voltage and high current, especially in power management, DC-DC converters, motor drives and battery management systems, providing efficient and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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