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IRFR3607TRPBF-VB Product details
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Product Introduction
IRFR3607TRPBF-VB is an N-channel MOSFET in TO252 package with low on-resistance and high current carrying capacity, suitable for high-efficiency switching circuit design. The drain-source voltage (VDS) of this MOSFET is 80V, the gate-source voltage (VGS) range is ±20V, and the turn-on threshold voltage (Vth) is 3V. The on-resistance (RDS(ON)) is as low as 5mΩ (@VGS=10V), and it can handle a drain current (ID) of up to 75A. This product uses Trench technology to provide excellent conduction characteristics and switching efficiency, suitable for high-power and high-efficiency switching applications.
IRFR3607TRPBF-VB is an N-channel MOSFET in TO252 package with low on-resistance and high current carrying capacity, suitable for high-efficiency switching circuit design. The drain-source voltage (VDS) of this MOSFET is 80V, the gate-source voltage (VGS) range is ±20V, and the turn-on threshold voltage (Vth) is 3V. The on-resistance (RDS(ON)) is as low as 5mΩ (@VGS=10V), and it can handle a drain current (ID) of up to 75A. This product uses Trench technology to provide excellent conduction characteristics and switching efficiency, suitable for high-power and high-efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Power consumption (Ptot)**: 160W
- **Junction temperature (Tj)**: 175°C
- **Technology**: Trench
- **Operating temperature range**: -55°C to +175°C
- **Package**: TO252
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Power consumption (Ptot)**: 160W
- **Junction temperature (Tj)**: 175°C
- **Technology**: Trench
- **Operating temperature range**: -55°C to +175°C
Domain and module applications：
Applications and Module Examples
1. **DC-DC Converters**: Due to the low on-resistance and high current handling capability of the IRFR3607TRPBF-VB, it is ideal for use in high-efficiency DC-DC converters. This MOSFET can be used in industrial and consumer electronics to efficiently convert and regulate voltages, especially in applications with high current demands.
2. **Motor Control and Drive**: In motor drive and control applications, especially motor drives that require high-speed switching, such as power tools and fans, the high current carrying capability and low conduction losses of the IRFR3607TRPBF-VB can improve efficiency and reduce heat.
3. **Power Management Systems**: In high-power power management modules, such as server power supplies, communication equipment, and high-performance computing equipment, the IRFR3607TRPBF-VB provides low power loss and high current handling characteristics, which helps achieve more efficient energy transmission and management.
4. **Load switch and protection circuit**: Its high current capability makes this MOSFET very suitable for load switch and overcurrent protection modules, ensuring that the equipment can still operate reliably and avoid failure under heavy load.
IRFR3607TRPBF-VB has a wide range of application scenarios in low-voltage, high-current applications, especially suitable for DC-DC converters, motor control, power management and load switches, and can provide efficient switching performance and low-power solutions.
1. **DC-DC Converters**: Due to the low on-resistance and high current handling capability of the IRFR3607TRPBF-VB, it is ideal for use in high-efficiency DC-DC converters. This MOSFET can be used in industrial and consumer electronics to efficiently convert and regulate voltages, especially in applications with high current demands.
2. **Motor Control and Drive**: In motor drive and control applications, especially motor drives that require high-speed switching, such as power tools and fans, the high current carrying capability and low conduction losses of the IRFR3607TRPBF-VB can improve efficiency and reduce heat.
3. **Power Management Systems**: In high-power power management modules, such as server power supplies, communication equipment, and high-performance computing equipment, the IRFR3607TRPBF-VB provides low power loss and high current handling characteristics, which helps achieve more efficient energy transmission and management.
4. **Load switch and protection circuit**: Its high current capability makes this MOSFET very suitable for load switch and overcurrent protection modules, ensuring that the equipment can still operate reliably and avoid failure under heavy load.
IRFR3607TRPBF-VB has a wide range of application scenarios in low-voltage, high-current applications, especially suitable for DC-DC converters, motor control, power management and load switches, and can provide efficient switching performance and low-power solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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