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IRFR3412TRPBF-VB Product details
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Product Introduction
**IRFR3412TRPBF-VB** is a high-performance N-channel MOSFET in a TO252 package. It is designed to handle high voltage and high current applications, with a maximum drain-source voltage (VDS) of 100V and a drain current (ID) of 45A. This MOSFET uses Trench technology to provide extremely low on-resistance and excellent switching performance. The low on-resistance and high current capability of the IRFR3412TRPBF-VB enable it to perform well in a variety of high voltage applications, especially where high efficiency and reliability are required.
**IRFR3412TRPBF-VB** is a high-performance N-channel MOSFET in a TO252 package. It is designed to handle high voltage and high current applications, with a maximum drain-source voltage (VDS) of 100V and a drain current (ID) of 45A. This MOSFET uses Trench technology to provide extremely low on-resistance and excellent switching performance. The low on-resistance and high current capability of the IRFR3412TRPBF-VB enable it to perform well in a variety of high voltage applications, especially where high efficiency and reliability are required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: IRFR3412TRPBF-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ (VGS = 10V)
- **Drain current (ID)**: 45A
- **Technology**: Trench technology
- **Model**: IRFR3412TRPBF-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ (VGS = 10V)
- **Drain current (ID)**: 45A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **High voltage power management**:
- IRFR3412TRPBF-VB is ideal for high voltage power management systems. Its 100V drain-source voltage capability and low on-resistance of 18mΩ enable it to provide stable switching control under high voltage conditions, suitable for use in power switches and high voltage power converters.
2. **DC-DC converter**:
- In DC-DC converter applications, this MOSFET can be used as a high current switching element. Its high current capability (45A) and low on-resistance ensure high efficiency and stability in the voltage conversion process, suitable for high power converter designs.
3. **Motor drive**:
- IRFR3412TRPBF-VB is also suitable for motor drive modules. Its ability to handle high current (45A) and maintain low on-resistance enables it to provide efficient and stable performance when driving motors, suitable for high current motor control and drive applications.
4. **Battery Management and Protection**:
- In battery management and protection systems, the high current handling capability and low on-resistance of this MOSFET enable it to effectively protect batteries from overcurrent and overvoltage. It provides stable switching control in battery charge and discharge management, and is suitable for protection and control of high-current battery systems.
These application examples demonstrate the excellent performance of the IRFR3412TRPBF-VB under high voltage and high current conditions, and are particularly suitable for power management, DC-DC converters, motor drives, and battery protection.
1. **High voltage power management**:
- IRFR3412TRPBF-VB is ideal for high voltage power management systems. Its 100V drain-source voltage capability and low on-resistance of 18mΩ enable it to provide stable switching control under high voltage conditions, suitable for use in power switches and high voltage power converters.
2. **DC-DC converter**:
- In DC-DC converter applications, this MOSFET can be used as a high current switching element. Its high current capability (45A) and low on-resistance ensure high efficiency and stability in the voltage conversion process, suitable for high power converter designs.
3. **Motor drive**:
- IRFR3412TRPBF-VB is also suitable for motor drive modules. Its ability to handle high current (45A) and maintain low on-resistance enables it to provide efficient and stable performance when driving motors, suitable for high current motor control and drive applications.
4. **Battery Management and Protection**:
- In battery management and protection systems, the high current handling capability and low on-resistance of this MOSFET enable it to effectively protect batteries from overcurrent and overvoltage. It provides stable switching control in battery charge and discharge management, and is suitable for protection and control of high-current battery systems.
These application examples demonstrate the excellent performance of the IRFR3412TRPBF-VB under high voltage and high current conditions, and are particularly suitable for power management, DC-DC converters, motor drives, and battery protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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